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Power Management - Charger Power

Adaptor / Battery Switch

Product Name Status Description Features Package Q-Level
Si4413ADY NEW P-Channel 30-V (D-S) MOSFET
VDS = -30V; VGS = ± 20V
Low rDS(on)
ID=15A; rDS(on)=0.0075Ω
Qgd= 61nC; VGSth= -1 V;
SMD
SO-8

Si4425BDY P-Channel 30-V (D-S) MOSFET
VDS = -30V; VGS = ± 20V
VGS = ± 20V
ID=-11.4A; rDS(on)=0.012Ω
Qgd= 64nC; VGSth= -1 V;
SMD
SO-8

Si4431BDY P-Channel 30-V (D-S) MOSFET
VDS = -30V; VGS = ± 20V
VGS = ± 20V
ID=-7.5A; rDS(on)=0.030Ω
Qgd= 13nC; VGSth= -1 V;
SMD
SO-8

Si4435BDY P-Channel 30-V (D-S) MOSFET
VDS = -30V; VGS = ± 20V
VGS = ± 20V
ID=-9.1A; rDS(on)=0.020Ω
Qgd= 33nC; VGSth= -1 V;
SMD
SO-8

Si4483EDY P-Channel 30-V (D-S) MOSFET
With 3-kV ESD Protection
VDS = -30V; VGS = ± 25V
High VGS = ± 25V
ID=-14A; rDS(on)=0.0085Ω
VGSth = -1.0 V;
SMD
SO-8

Si4825DY P-Channel 30-V (D-S) MOSFET
VDS = -30V; VGS = ± 25V
High VGS = ± 25V
ID=-11.5A; rDS(on)=0.014Ω
Qg=15nC; VGSth= -1 V;
SMD
SO-8

Si4835BDY P-Channel 30-V (D-S) MOSFET
VDS = -30V; VGS = ± 25V
High VGS = ± 25V
ID=-9.6A; rDS(on)=0.018Ω
Qg=25nC; VGSth= -1 V;
SMD
SO-8

Si4890DY N-Ch. Reduced Qg, Fast Switching MOSFET
VDS = 30V; VGS = ± 20V
High VGS = ± 25V
ID=-11A; rDS(on)=0.012Ω
Qg=14.2nC; VGSth=0.8 V;
SMD
SO-8

Si7459DP P-Channel 30-V (D-S) MOSFET
VDS = -30V; VGS = ± 25V
Low Thermal Resistance PowerPAK®
Low rDS(on), high VGS
ID=-22A; rDS(on)=0.0068Ω
Qg= 113nC; VGSth= -1V
SMD
PowerPAK SO-8

Si7945DP Dual P-Channel 30-V (D-S) MOSFET
VGS= ± 20V;
TrenchFET® Power MOSFET
Low rDS(on);
ID=-10.9A; rDS(on)=0.020Ω
Qg= 49 nC; VGSth= -1 V
SMD
PowerPAK SO-8


Dual Mofets

Product Name Status Description Features Package Q-Level
Si4830 ADY Dual N-Ch. 30-V (D-S) MOSFET w. SCHOTTKY
DUAL; With 2 A SCHOTTKY;
VDS = 30V; VGS = ± 20V
VGS = ± 20V
ID=7.5A; rDS(on)=0.030Ω
Qgd= 2.5nC; VGSth= 1.4 V;
SMD
SO-8

Si4834BDY Dual N-Ch. 30-V (D-S) MOSFET w. SCHOTTKY
DUAL; With 2 A SCHOTTKY;
VDS = 30V; VGS = ± 20V
VGS = ± 20V
ID=7.5A; rDS(on)=0.030Ω
Qgd= 2.5nC; VGSth= 0.8 V;
SMD
SO-8

Si4914DY Dual N-Ch 30-V (D-S) MOSFET w. SCHOTTKY
DUAL; With 2 A SCHOTTKY;
VDS = 30V; VGS = ± 20V
ID = 7 A / 7.4 A
rDS(on)=0.032Ω / 0.027Ω
Qgd=1.7 / 2.2nC; VGSth=1V
SMD
SO-8

Si4952DY Dual N-Channel 25-V (D-S) MOSFET
DUAL
VDS = 25V; VGS = ± 16V
VGS = ± 20V
ID=7.5A; rDS(on)=0.030Ω
Qgd= 2.5nC; VGSth= 0.8 V;
SMD
SO-8


High-Side MOSFETs

Product Name Status Description Features Package Q-Level
Si4800BDY N-Ch. Reduced Qg, Fast Switching MOSFET
VDS = 30V; VGS = ± 25V
High-Efficient PWM Optimized
High VGS = ± 25V
ID=9A; rDS(on)=0.030Ω
Qgd= 3.5nC; VGSth= 0.8 V;
SMD
SO-8

Si4812BDY N-Ch. 30-V (D-S) MOSFET w. SCHOTTKY
With 1.4 A SCHOTTKY;
VDS = 30V; VGS = ± 20V
VGS = ± 20V
ID=9.5A; rDS(on)=0.021Ω
Qgd= 2.6nC; VGSth= 1 V;
SMD
SO-8

Si4835BDY P-Channel 30-V (D-S) MOSFET
VDS = -30V; VGS = ± 25V
High VGS = ± 25V
ID=-9.6A; rDS(on)=0.018Ω
Qg=25nC; VGSth= -1 V;
SMD
SO-8

Si7230DN NEW N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
PWM Optimized
High power dissipation
ID=14A; rDS(on)=0.016Ω
Qgd= 4.3nC; VGSth= 1 V;
SMD
PowerPAK 1212

Si7326DN NEW N-Ch. 30-V (D-S) Fast Switching MOSFET
VDS = 30V; VGS = ± 20V
High power dissipation
ID=10A; rDS(on)=0.030Ω
Qgd= 3.5nC; VGSth= 0.8 V;
SMD
PowerPAK 1212


Inductors

Product Name Status Description Features Package Q-Level
IHLP2525CZ-01 Inductor; High Current; Low Profile;
Small Outline Package; Fully Shielded;
Miniature Power
Profile height ≤ 3 mm
0.1 μH to 10 μH
IDC up to 60 A
SMD
2525
7.3x7.3x3.0mm

IHLP4040DZ-01 Inductor; High Current; Low Profile;
Small Outline Package; Fully Shielded;
Profile height ≤ 4mm
0.19 μH to 10 μH
IDC up to 90 A
SMD
4040
11.5x11.5x4.0mm

IHLP4040DZ-11 Inductor; High Current; Low Profile;
Small Outline Package; Fully Shielded;
Profile height ≤ 4mm
0.19 μH to 100 μH
IDC up to 46 A
SMD
4040
11.5x11.5x4.0mm

IHLP5050CE-01 Inductor; High Current; Low Profile;
Small Outline Package; Fully Shielded;
Profile height ≤ 3.5mm
0.1 μH to 10 μH
IDC up to 84 A
SMD
5050
13.5x13.5x3.5mm


Low Side MOSFETs

Product Name Status Description Features Package Q-Level
Si4800BDY N-Ch. Reduced Qg, Fast Switching MOSFET
VDS = 30V; VGS = ± 25V
High-Efficient PWM Optimized
High VGS = ± 25V
ID=9A; rDS(on)=0.030Ω
Qgd= 3.5nC; VGSth= 0.8 V;
SMD
SO-8

Si4812BDY N-Ch. 30-V (D-S) MOSFET w. SCHOTTKY
With 1.4 A SCHOTTKY;
VDS = 30V; VGS = ± 20V
VGS = ± 20V
ID=9.5A; rDS(on)=0.021Ω
Qgd= 2.6nC; VGSth= 1 V;
SMD
SO-8

Si7230DN NEW N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
PWM Optimized
High power dissipation
ID=14A; rDS(on)=0.016Ω
Qgd= 4.3nC; VGSth= 1 V;
SMD
PowerPAK 1212

Si7326DN NEW N-Ch. 30-V (D-S) Fast Switching MOSFET
VDS = 30V; VGS = ± 20V
High power dissipation
ID=10A; rDS(on)=0.030Ω
Qgd= 3.5nC; VGSth= 0.8 V;
SMD
PowerPAK 1212


Resistors

Product Name Status Description Features Package Q-Level
WSL2010-18 1 Watt Current sensing Resistor
Power Metal Strip® Resistors;
Low Resistance Value;
High power & reliability
R=0.001Ω to 0.5Ω
TCR <= ± 75ppm
SMD
2010
5.08x2.54x0.635

WSL2512-18 2 Watt Current sensing Resistor
Power Metal Strip® Resistors;
Low Resistance Value;
High power & reliability
R=0.0005Ω to 0.04Ω
TCR <= ± 75ppm
SMD
2512
6.36x3.18x0.635

WSLP1206 NEW 1 Watt Power Metal Strip® Resistors;
Very High Power- Small Size;
Current Sensing;
High power & reliability
R=0.001Ω to 0.05Ω
P70 = 1W
SMD
1206
3.2x1.6x0.635mm


Schottky Diodes

Product Name Status Description Features Package Q-Level
B140 Schottky Barrier Rectifier; Low Profile;
Guardring for overload protection;
High Surge Capabilities;
VRRM = 40 V;
IF = 1 A, VF = 0.52 V,
SMD
DO-214AC (SMA)
5.28x2.8x2.3mm

B240 A High-Current Density Schottky Rectifier
High Efficiency; Low Power Loss;
Low Profile
VRRM = 40 V;
IF = 2 A, VF = 0.5 V,
SMD
DO-214AC (SMA)
5.28x2.8x2.3mm

B340 A High-Current Density Schottky Rectifier
High Efficiency; Low Power Loss;
RoHS-Compliant
VRRM = 40 V;
IF = 3A, VF = 0.5 V,
SMD
DO-214AC (SMA)
5.28x2.8x2.3mm

MSS1P4 Schottky Barrier Rectifiers
SMD; ℮SMP™ Series;
VRRM = 40 V;
IF = 1 A; VF = 0.41 V;
SMD
MicroSMP
2.7x1.4x0.75mm

SS10P4 NEW Schottky Barrier Rectifiers; SMD;
High Current Density;
℮SMP™ Series;
High power /small package
VRRM = 40 V;
IF = 10 A;VF = 0.384 V
SMD
TO-277A (SMPC)
6.65x4.75x1.2mm

SS1P4 NEW Schottky Barrier Rectifiers; SMD;
High Current Density;
℮SMP™ Series;
Small package
VRRM = 40 V;
IF = 2 A, VF = 0.4 V,
SMD
DO-220AA (SMP)
4x2.18x1.15mm

SS2P4 NEW Schottky Barrier Rectifiers; SMD;
High Current Density;
℮SMP™ Series;
Small package
VRRM = 40 V;
IF = 2 A, VF = 0.43 V,
SMD
DO-220AA (SMP)
4x2.18x1.15mm

SS3P4 NEW Schottky Barrier Rectifiers; SMD;
High Current Density;℮SMP™ Series;
Small package
VRRM = 40 V;
IF = 3A, VF = 0.5 V,
SMD
DO-220AA (SMP)
4x2.18x1.15mm

SS5P4 NEW Schottky Barrier Rectifiers; SMD;
High Current Density;℮SMP™ Series;
High power /small package
VRRM = 40 V;
IF = 5 A, VF = 0.403 V,
SMD
TO-277A (SMPC)
6.65x4.75x1.2mm

SS8P4C NEW Schottky Barrier Rectifiers; SMD;
High Current Density;℮SMP™ Series;
Dual Common-Cathode;
High power /small package
VRRM = 40 V;
IF = 8 A, VF = 0.42 V,
SMD
TO-277A (SMPC)
6.65x4.75x1.2mm

SSC54 NEW Schottky Barrier Rectifiers; SMD;
High Current Density;
Small Outline
VRRM = 40 V;
IF = 5 A, VF = 0.36V,
SMD
DO-220AA (SMC)
8.13x6.22x2.62mm


Signal Mosfet

Product Name Status Description Features Package Q-Level
2N7002K N-Ch 60-V (D-S)MOSFET; 2KV ESD protected
Low On-Resistance; Low Threshold;
Low Input Capacitance; Fast Switch
VDS = 60 V; VGS = 20 V;
rDS(on) = 4 Ohms,
ID = 0.3A, VGSth = 1 V
SMD
TO-236 (SOT-23)


Switch Diodes

Product Name Status Description Features Package Q-Level
1N4148WS-V Small Signal Fast Switching Diode;
Silicon epitaxial planar diode;
RoHS-Compliant;
VRRM = 75 V;
IF = 0.15A; VF = 1.2 V;
SMD
SOD323
2.85x1.5x1.15mm

BAT54 A-V Small Signal Schottky Diodes;
Single & Dual Schematics;
Very Low Turn-On and Fast Switching
Dual, VRRM = 30 V;
IF = 0.2 A, VF = 0.8 V,
SMD
TO-236 (SOT-23)
3.0x2.5x1.1mm
Thin Pack