POWER MANAGEMENT - CPU Power
High-Side MOSFETs
| Product Name | Status | Description | Features | Package | Q-Level |
| Si4386DY | N-Ch. Reduced Qg, Fast Switching MOSFET VDS = 30V; VGS = ± 20V |
Low Qgd; low rDS(on) ID=16A; rDS(on)=0.0095Ω Qgd = 3.0 nC; |
SMD SO-8 |
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| Si4392DY | N-Ch. Reduced Qg, Fast Switching MOSFET VDS = 30V; VGS = ± 20V |
Low Qgd ID=12.5A;rDS(on)=0.01375Ω Qgd = 2.6 nC; |
SMD SO-8 |
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| Si4682DY | NEW | N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V |
Low Qgd ID=12A; rDS(on)=0.0135Ω Qgd = 3.1 nC; |
SMD SO-8 |
|
| Si4684DY | NEW | N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 12V |
Low Qgd ID=12A; rDS(on)=0.0135Ω Qgd = 2.8 nC; |
SMD SO-8 |
|
| Si4686DY | NEW | N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V Extremely Low Qgd WFET® Technology |
Low Qgd ID=13.8A; rDS(on)=0.014Ω Qgd = 2.8 nC; |
SMD SO-8 |
|
| Si7386DP | N-Ch. Reduced Qg, Fast Switching MOSFET VDS = 30V; VGS = ± 20V |
Low Qgd, low rDS(on) ID=19A; rDS(on)=0.0095Ω Qgd = 3.0 nC |
SMD PowerPAK SO-8 |
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| Si7392DP | N-Ch. Reduced Qg, Fast Switching WFET® VDS = 30V; VGS = ± 20V |
Low Qgd ID=15A; rDS(on)=0.01375Ω Qgd = 2.6 nC |
SMD PowerPAK SO-8 |
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| Si7682DP | NEW | N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V 100% Rg Tested |
Low Qgd ID=17.5A; rDS(on)=0.013Ω Qgd = 3.1 nC; |
SMD PowerPAK SO-8 |
|
| Si7686DP | NEW | N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V Low Thermal Resistance PowerPAK® |
Low Qgd ID=17.9A; rDS(on)= 0.014Ω Qgd = 2.8 nC; |
SMD PowerPAK SO-8 |
|
| SUD50N03-10P | N-Ch 30-V (D-S), 175°C, MOSFET; PWM Optimized; VDS = 30 V, VGS = ±20 V |
ID=63A; rDS(on)=0.013Ω Qgd = 5 nC |
SMD TO-252 DPAK |
Inductors
| Product Name | Status | Description | Features | Package | Q-Level |
| IHLP4040DZ-01 | Inductor; High Current; Low Profile; Small Outline Package; Fully Shielded; |
Profile height ≤ 4mm 0.19 μH to 10 μH IDC up to 90 A |
SMD 4040 11.5x11.5x4.0mm |
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| IHLP4040DZ-11 | Inductor; High Current; Low Profile; Small Outline Package; Fully Shielded; |
Profile height ≤ 4mm 0.19 μH to 100 μH IDC up to 46 A |
SMD 4040 11.5x11.5x4.0mm |
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| IHLP5050CE-01 | Inductor; High Current; Low Profile; Small Outline Package; Fully Shielded; |
Profile height ≤ 3.5mm 0.1 μH to 10 μH IDC up to 84 A |
SMD 5050 13.5x13.5x3.5mm |
Low-Side MOSFETs
| Product Name | Status | Description | Features | Package | Q-Level |
| Si4336DY | N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V |
Low rDS(on) ID=16.3A; rDS(on)=0.0067Ω VGSth = 1.0 V; |
SMD SO-8 |
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| Si4430BDY | N-Channel 30-V MOSFET VDS = 30V; VGS = ± 20V |
Low rDS(on) ID=20A; rDS(on)=0.006Ω VGSth = 1.0 V; |
SMD SO-8 |
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| Si4634DY | NEW | N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V |
low rDS(on), high Vast ID=16.3A; rDS(on)=0.0067Ω VGSth = 1.4 V; |
SMD SO-8 |
|
| Si4874BDY | NEW | N-Channel 30-V MOSFET VDS = 30V; VGS = ± 20V |
Low rDS(on) ID=16A; rDS(on)=0.0085Ω VGSth = 1 V |
SMD SO-8 |
|
| Si7336 ADP | NEW | N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V Ultra Low (ON) Resistance; |
Low rDS(on) ID=30A; rDS(on)=0.0040Ω VGSth = 1 V |
SMD PowerPAK SO-8 |
|
| Si7634BDP | NEW | N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V |
Low rDS(on), high Vast ID=23A; rDS(on)=0.0076Ω VGSth = 1.5 V |
SMD PowerPAK SO-8 |
|
| Si7636DP | N-Channel 30-V (D-S) MOSFET VDS = 30V; VGS = ± 20V Ultra Low (ON) Resistance |
Low rDS(on) ID=28A; rDS(on)=0.0048Ω VGSth = 1 V |
SMD PowerPAK SO-8 |
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| SUD50N03-06 AP | N-Channel 30-V (D-S) MOSFET Optimized for Low–Side Synch. Rectif. VDS = 30 V, VGS = ±20 V |
Low rDS(on) ID=30A; rDS(on)=0.0078Ω VGSth = 1.2 V |
SMD TO-252 DPAK |
Resistors
| Product Name | Status | Description | Features | Package | Q-Level |
| WSL2010-18 | 1 Watt Current sensing Resistor Power Metal Strip® Resistors; Low Resistance Value; |
High power & reliability R=0.001Ω to 0.2Ω TCR ≤ 20ppm |
SMD 2010 5.08x2.54x0.635 |
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| WSL2512-18 | 2 Watt Current sensing Resistor Power Metal Strip® Resistors; Low Resistance Value; |
High power & reliability R=0.001Ω to 0.2Ω TCR ≤ 20ppm |
SMD 2512 6.36x3.18x0.635 |
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| WSLP1206 | NEW | 1 Watt Power Metal Strip® Resistors; Very High Power- Small Size; Current Sensing; |
High power & reliability R=0.001Ω to 0.2Ω |
SMD 1206 3.2x1.6x0.635mm |
Schottky Diodes
| Product Name | Status | Description | Features | Package | Q-Level |
| B140 | Schottky Barrier Rectifier; Low Profile; Guardring for overload protection; High Surge Capabilities; |
VRRM = 40 V; IF = 1 A, VF = 0.52 V, |
SMD DO-214AC (SMA) 5.28x2.8x2.3mm |
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| B240 A | High-Current Density Schottky Rectifier High Efficiency; Low Power Loss; Low Profile |
VRRM = 40 V; IF = 2 A, VF = 0.5 V, |
SMD DO-214AC (SMA) 5.28x2.8x2.3mm |
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| B340 A | High-Current Density Schottky Rectifier High Efficiency; Low Power Loss; RoHS-Compliant |
VRRM = 40 V; IF = 3A, VF = 0.5 V, |
SMD DO-214AC (SMA) 5.28x2.8x2.3mm |
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| MSS1P4 | Schottky Barrier Rectifiers SMD; ℮SMP™ Series; |
VRRM = 40 V; IF = 1 A; VF = 0.41 V; |
SMD MicroSMP 2.7x1.4x0.75mm |
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| SS1P4 | NEW | Schottky Barrier Rectifiers; SMD; High Current Density; ℮SMP™ Series; |
Small package VRRM = 40 V; IF = 2 A, VF = 0.4 V, |
SMD DO-220AA (SMP) 4x2.18x1.15mm |
|
| SS2P4 | NEW | Schottky Barrier Rectifiers; SMD; High Current Density; ℮SMP™ Series; |
Small package VRRM = 40 V; IF = 2 A, VF = 0.43 V, |
SMD DO-220AA (SMP) 4x2.18x1.15mm |
|
| SS3P4 | NEW | Schottky Barrier Rectifiers; SMD; High Current Density;℮SMP™ Series; |
Small package VRRM = 40 V; IF = 3A, VF = 0.5 V, |
SMD DO-220AA (SMP) 4x2.18x1.15mm |
Signal Switch
| Product Name | Status | Description | Features | Package | Q-Level |
| 2N7002K | N-Ch 60-V (D-S)MOSFET; 2KV ESD protected Low On-Resistance; Low Threshold; Low Input Capacitance; Fast Switch |
VDS = 60 V; VGS = 20 V; rDS(on) = 4 Ohms, ID = 0.3A, VGSth = 1 V |
SMD TO-236 (SOT-23) |
Switch Diodes
| Product Name | Status | Description | Features | Package | Q-Level |
| 1N4148WS-V | Small Signal Fast Switching Diode; Silicon epitaxial planar diode; RoHS-Compliant; |
VRRM = 75 V; IF = 0.15A; VF = 1.2 V; |
SMD SOD323 2.85x1.5x1.15mm |
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| BAT54 A | Schottky Barrier Diode; DUAL; Miniature; for high speed switching; clamping; and circuit protection. |
Dual, VRRM = 30 V; IF = 0.2 A, VF = 0.5 V, |
SMD TO-236 (SOT-23) 3.1x2.6x1.15mm |
Std. | |
| BAT54 A-V | Small Signal Schottky Diodes; Single & Dual Schematics; Very Low Turn-On and Fast Switching |
Dual, VRRM = 30 V; IF = 0.2 A, VF = 0.8 V, |
SMD TO-236 (SOT-23) 3.0x2.5x1.1mm |
Thin Pack | |
| BAT54 AW | SOT323: | DUAL;VRRM = 30 V, IF = 0.2 A, VF = 0.5 V, |
SMD SOT-323 2.2x2.2x1.0mm |
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| MBR0530 | Schottky Diodes; Fast Switching; Ultra Low Forward Voltage drop; |
VRRM = 30 V; IF = 0.5 A, VF = 0.35 V; |
SMD SOD123 3.85x1.7x1.35mm |
Thermistor NTC
| Product Name | Status | Description | Features | Package | Q-Level |
| 2381 615 1xxx | NTC Thermistors; Surface Mount; TCR from 6 to 2% even at higher temp. RoHS-Compliant; |
2 kΩ-470 kΩ;B25/85Tol.=1% RTol.@25°C <= 5 %; Ptot = 0.21 W |
SMD 0805 EIA-Sizes |
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| 2381 615 2xxx | NTC Thermistors; Surface Mount; Temperature Compensation |
4.7 kΩ-100 kΩ; RTol.@25°C <= 5 %; P=0.125 W; B25/85Tol.=1% |
SMD 0603 EIA-Sizes |
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| 2381 615 3xxx | NTC Thermistors; Surface Mount; Tolerance on B25/85 down to 1 % |
2.2 kΩ to 100 kΩ; 0.125 W RTol.@25°C = 5% to 1 %; |
SMD 0603 EIA-Sizes |
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| 2381 615 4xxx | NTC Thermistors; Surface Mount; Tolerance on B25/85 down to 1 % |
4.7 kΩ to 100 kΩ; 0.125 W RTol.@25°C = 5% to 1 %; |
SMD 0402 EIA-Sizes |
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| 2381 615 5xxx | NTC Thermistors; Surface Mount; Tolerance on B25/85 down to 1 % |
2.2 kΩ to 680 kΩ, 0.21 W RTol.@25°C = 10% to 2 %; |
SMD 0805 EIA-Sizes |
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| NTHS | NTC Thermistors; Monolithic Construction | R25 = 1 kΩ to 330 kΩ Tol.@25°C = 10 % to 1% B(25/75) = 3181 to 4247 |
SMD 0402 to 1206 EIA-Sizes |
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