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Power Management - System-,DDR-,Chipset-,VGA-Power

Dual MOSFETs

Product Name Status Description Features Package Q-Level
Si4830 ADY Dual N-Ch. 30-V (D-S) MOSFET w. SCHOTTKY
DUAL; With 2 A SCHOTTKY;
VDS = 30V; VGS = ± 20V
VGS = ± 20V
ID=7.5A; rDS(on)=0.030Ω
Qgd= 2.5nC; VGSth= 1.4 V;
SMD
SO-8

Si4834BDY Dual N-Ch. 30-V (D-S) MOSFET w. SCHOTTKY
DUAL; With 2 A SCHOTTKY;
VDS = 30V; VGS = ± 20V
VGS = ± 20V
ID=7.5A; rDS(on)=0.030Ω
Qgd= 2.5nC; VGSth= 0.8 V;
SMD
SO-8

Si4914DY Dual N-Ch 30-V (D-S) MOSFET w. SCHOTTKY
DUAL; With 2 A SCHOTTKY;
ID = 7 A / 7.4 A
rDS(on)=0.032Ω / 0.027Ω
Qgd=1.7 / 2.2nC; VGSth=1V
SMD
SO-8

Si4952DY Dual N-Channel 25-V (D-S) MOSFET
DUAL
VDS = 25V; VGS = ± 16V
VGS = ± 20V
ID=7.5A; rDS(on)=0.030Ω
Qgd= 2.5nC; VGSth= 0.8 V;
SMD
SO-8

Si7844DP Dual N-Channel 30-V (D-S) MOSFET;
VGS= ± 20V;
TrenchFET® Power MOSFET
High power dissipation;
ID=10 A; rDS(on)= 0.030 Ω
Qgd= 2.7nC; VGSth= 0.8 V;
SMD
PowerPAK SO-8


High-Side MOSFETs

Product Name Status Description Features Package Q-Level
Si4386DY N-Ch. Reduced Qg, Fast Switching MOSFET
VDS = 30V; VGS = ± 20V
Low Qgd, low rDS(on)
ID=16A; rDS(on)=0.0095Ω
Qgd = 3.0 nC;
SMD
SO-8

Si4392DY N-Ch. Reduced Qg, Fast Switching MOSFET
VDS = 30V; VGS = ± 20V
Low Qgd
ID=12.5A;rDS(on)=0.01375Ω
Qgd = 2.6 nC;
SMD
SO-8

Si4682DY NEW N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
Low Qgd
ID=12A; rDS(on)=0.0135Ω
Qgd = 3.1 nC;
SMD
SO-8

Si4684DY NEW N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 12V
Low Qgd
ID=12A; rDS(on)=0.0135Ω
Qgd = 2.8 nC;
SMD
SO-8

Si4686DY NEW N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
Extremely Low Qgd WFET® Technology
Low Qgd
ID=13.8A; rDS(on)=0.014Ω
Qgd = 2.8 nC;
SMD
SO-8

Si4800BDY N-Ch. Reduced Qg, Fast Switching MOSFET
VDS = 30V; VGS = ± 25V
High-Efficient PWM Optimized
High VGS = ± 25V
ID=9A; rDS(on)=0.030Ω
Qgd= 3.5nC; VGSth= 0.8 V;
SMD
SO-8

Si4812BDY N-Ch. 30-V (D-S) MOSFET w. SCHOTTKY
With 1.4 A SCHOTTKY;
VDS = 30V; VGS = ± 20V
VGS = ± 20V
ID=9.5A; rDS(on)=0.021Ω
Qgd= 2.6nC; VGSth= 1 V;
SMD
SO-8

Si4894BDY N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
Low Qgd
ID=12A; rDS(on)=0.016Ω
VGSth = 1 V
SMD
SO-8

Si7112DN NEW N-Ch. 30-V (D-S) Fast Switching MOSFET
VDS = 30V; VGS = ± 12V
Small package;
low Qgd, low rDS(on)
ID=17.8A; rDS(on)=0.0082Ω
Qgd= 3.1nC; VGSth= 0.6 V;
SMD
PowerPAK 1212

Si7230DN NEW N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
PWM Optimized
Small package
ID=14A; rDS(on)=0.016Ω
Qgd= 4.3nC; VGSth= 1 V;
SMD
PowerPAK 1212

Si7326DN N-Ch. 30-V (D-S) Fast Switching MOSFET
VDS = 30V; VGS = ± 20V
Small package
ID=10A; rDS(on)=0.030Ω
Qgd= 3.5nC; VGSth= 0.8 V;
SMD
PowerPAK 1212

Si7386DP NEW N-Ch. Reduced Qg, Fast Switching MOSFET
VDS = 30V; VGS = ± 20V
Low Qgd, low rDS(on)
ID=19A; rDS(on)=0.0095Ω
Qgd = 3.0 nC
SMD
PowerPAK SO-8

Si7392DP N-Ch. Reduced Qg, Fast Switching WFET®
VDS = 30V; VGS = ± 20V
Low Qgd
ID=15A; rDS(on)=0.01375Ω
Qgd = 2.6 nC
SMD
PowerPAK SO-8

Si7682DP NEW N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
100% Rg Tested
Low Qgd
ID=17.5A; rDS(on)=0.013Ω
Qgd = 3.1 nC;
SMD
PowerPAK SO-8

Si7686DP NEW N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
Low Thermal Resistance PowerPAK®
Low Qgd
ID=17.9A; rDS(on)= 0.014Ω
Qgd = 2.8 nC;
SMD
PowerPAK SO-8


Inductors

Product Name Status Description Features Package Q-Level
IHLP1616BZ-01 NEW Inductor; High Current; Low Profile;
Small Outline Package; Fully Shielded;
Ultra Miniature Power
Profile height ≤ 2 mm;
0.47 μH to 4.7 μH;
IDC up to 12.8 A;
SMD
1616
4.8x4.8x2.0mm

IHLP2525CZ-01 Inductor; High Current; Low Profile;
Small Outline Package; Fully Shielded;
Miniature Power
Profile height ≤ 3 mm
0.1 μH to 10 μH
IDC up to 60 A
SMD
2525
7.3x7.3x3.0mm

IHLP4040DZ-01 Inductor; High Current; Low Profile;
Small Outline Package; Fully Shielded;
Profile height ≤ 4mm
0.19 μH to 10 μH
IDC up to 90 A
SMD
4040
11.5x11.5x4.0mm

IHLP4040DZ-11 Inductor; High Current; Low Profile;
Small Outline Package; Fully Shielded;
Profile height ≤ 4mm
0.19 μH to 100 μH
IDC up to 46 A
SMD
4040
11.5x11.5x4.0mm

IHLP5050CE-01 Inductor; High Current; Low Profile;
Small Outline Package; Fully Shielded;
Profile height ≤ 3.5mm
0.1 μH to 10 μH
IDC up to 84 A
SMD
5050
13.5x13.5x3.5mm


Low-Side MOSFETs

Product Name Status Description Features Package Q-Level
Si4336DY N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
Low rDS(on)
ID=16.3A; rDS(on)=0.0067Ω
VGSth = 1.0 V;
SMD
SO-8

Si4386DY N-Ch. Reduced Qg, Fast Switching MOSFET
VDS = 30V; VGS = ± 20V
Low Qgd, low rDS(on)
ID=16A; rDS(on)=0.0095Ω
Qgd = 3.0 nC;
SMD
SO-8

Si4430BDY N-Channel 30-V MOSFET
VDS = 30V; VGS = ± 20V
Low rDS(on)
ID=20A; rDS(on)=0.006Ω
VGSth = 1.0 V;
SMD
SO-8

Si4634DY NEW N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
Low rDS(on), high Vast
ID=16.3A; rDS(on)=0.0067Ω
VGSth = 1.4 V;
SMD
SO-8

Si4682DY N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
VGS = ± 20V
ID=12A; rDS(on)=0.0135Ω
Qgd = 3.1 nC;
SMD
SO-8

Si4686DY N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
Extremely Low Qgd WFET® Technology
VGS = ± 20V
ID=13.8A; rDS(on)=0.014Ω
Qgd = 2.8 nC;
SMD
SO-8

Si4800BDY N-Ch. Reduced Qg, Fast Switching MOSFET
VDS = 30V; VGS = ± 25V
High-Efficient PWM Optimized
High VGS = ± 25V
ID=9A; rDS(on)=0.030Ω
Qgd= 3.5nC; VGSth= 0.8 V;
SMD
SO-8

Si4812BDY N-Ch. 30-V (D-S) MOSFET w. SCHOTTKY
With 1.4 A SCHOTTKY;
VDS = 30V; VGS = ± 20V
VGS = ± 20V
ID=9.5A; rDS(on)=0.021Ω
Qgd= 2.6nC; VGSth= 1 V;
SMD
SO-8

Si4874BDY NEW N-Channel 30-V MOSFET
VDS = 30V; VGS = ± 20V
Low rDS(on)
ID=16A; rDS(on)=0.0085Ω
VGSth = 1 V
SMD
SO-8

Si7112DN NEW N-Ch. 30-V (D-S) Fast Switching MOSFET
VDS = 30V; VGS = ± 12V
Small package;
low Qgd, low rDS(on)
ID=17.8A; rDS(on)=0.0082Ω
Qgd= 3.1nC; VGSth= 0.6 V;
SMD
PowerPAK 1212

Si7114DN NEW N-Ch. 30-V (D-S) Fast Switching MOSFET
VDS = 30V; VGS = ± 20V
TrenchFET® Gen II Power MOSFET
Small package
ID=18.3A; rDS(on)=0.010Ω
Qgd= 3.6nC; VGSth= 1 V;
SMD
PowerPAK 1212

Si7230DN NEW N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
PWM Optimized
Small package
ID=14A; rDS(on)=0.016Ω
Qgd= 4.3nC; VGSth= 1 V;
SMD
PowerPAK 1212

Si7326DN NEW N-Ch. 30-V (D-S) Fast Switching MOSFET
VDS = 30V; VGS = ± 20V
Small package
ID=10A; rDS(on)=0.030Ω
Qgd= 3.5nC; VGSth= 0.8 V;
SMD
PowerPAK 1212

Si7336 ADP NEW N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
Ultra Low (ON) Resistance;
Low rDS(on)
ID=30A; rDS(on)=0.0040Ω
VGSth = 1 V
SMD
PowerPAK SO-8

Si7634BDP NEW N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
Low rDS(on), high Vast
ID=23A; rDS(on)=0.0076Ω
VGSth = 1.5 V
SMD
PowerPAK SO-8

Si7636DP NEW N-Channel 30-V (D-S) MOSFET
VDS = 30V; VGS = ± 20V
Ultra Low (ON) Resistance
Low rDS(on)
ID=28A; rDS(on)=0.0048Ω
VGSth = 1 V
SMD
PowerPAK SO-8


Resistors

Product Name Status Description Features Package Q-Level
WSL2010-18 1 Watt Current sensing Resistor
Power Metal Strip® Resistors;
Low Resistance Value;
High power & reliability
R=0.001Ω to 0.5Ω
TCR <= ± 75ppm
SMD
2010
5.08x2.54x0.635

WSL2512-18 2 Watt Current sensing Resistor
Power Metal Strip® Resistors;
Low Resistance Value;
High power & reliability
R=0.0005Ω to 0.04Ω
TCR <= ± 75ppm
SMD
2512
6.36x3.18x0.635

WSLP1206 NEW 1 Watt Power Metal Strip® Resistors;
Very High Power- Small Size;
Current Sensing;
High power & reliability
R=0.001Ω to 0.05Ω
P70 = 1W
SMD
1206
3.2x1.6x0.635mm


Schottky Diodes

Product Name Status Description Features Package Q-Level
B140 Schottky Barrier Rectifier; Low Profile;
Guardring for overload protection;
High Surge Capabilities;
VRRM = 40 V;
IF = 1 A, VF = 0.52 V,
SMD
DO-214AC (SMA)
5.28x2.8x2.3mm

B240 A High-Current Density Schottky Rectifier
High Efficiency; Low Power Loss;
Low Profile
VRRM = 40 V;
IF = 2 A, VF = 0.5 V,
SMD
DO-214AC (SMA)
5.28x2.8x2.3mm

B340 A High-Current Density Schottky Rectifier
High Efficiency; Low Power Loss;
RoHS-Compliant
VRRM = 40 V;
IF = 3A, VF = 0.5 V,
SMD
DO-214AC (SMA)
5.28x2.8x2.3mm

MSS1P4 Schottky Barrier Rectifiers
SMD; ℮SMP™ Series;
VRRM = 40 V;
IF = 1 A; VF = 0.41 V;
SMD
MicroSMP
2.7x1.4x0.75mm

SS1P4 NEW Schottky Barrier Rectifiers; SMD;
High Current Density;
℮SMP™ Series;
Small package
VRRM = 40 V;
IF = 2 A, VF = 0.4 V,
SMD
DO-220AA (SMP)
4x2.18x1.15mm

SS2P4 NEW Schottky Barrier Rectifiers; SMD;
High Current Density;
℮SMP™ Series;
Small package
VRRM = 40 V;
IF = 2 A, VF = 0.43 V,
SMD
DO-220AA (SMP)
4x2.18x1.15mm

SS3P4 NEW Schottky Barrier Rectifiers; SMD;
High Current Density;℮SMP™ Series;
Small package
VRRM = 40 V;
IF = 3A, VF = 0.5 V,
SMD
DO-220AA (SMP)
4x2.18x1.15mm


Small-Signal MOSFET

Product Name Status Description Features Package Q-Level
2N7002K N-Ch 60-V (D-S)MOSFET; 2KV ESD protected
Low On-Resistance; Low Threshold;
Low Input Capacitance; Fast Switch
VDS = 60 V; VGS = 20 V;
rDS(on) = 4 Ohms,
ID = 0.3A, VGSth = 1 V
SMD
TO-236 (SOT-23)


Switch Diodes

Product Name Status Description Features Package Q-Level
1N4148WS-V Small Signal Fast Switching Diode;
Silicon epitaxial planar diode;
RoHS-Compliant;
VRRM = 75 V;
IF = 0.15A; VF = 1.2 V;
SMD
SOD323
2.85x1.5x1.15mm

BAT54 A-V Small Signal Schottky Diodes;
Single & Dual Schematics;
Very Low Turn-On and Fast Switching
Dual, VRRM = 30 V;
IF = 0.2 A, VF = 0.8 V,
SMD
TO-236 (SOT-23)
3.0x2.5x1.1mm
Thin Pack