SECONDARY SIDE - Power Factor Correction
Buffer Capacitor
| Product Name | Status | Description | Features | Package | Q-Level |
| EKV | C5: radial Al-electrolytic capacitor | Useful life > 10 kh at 105 °C; cap.range: 6.8 to 150 μF at 160 V to 450 V |
TH / Radial 10x16mm to 18x31.5mm |
Decoupling Capacitor
| Product Name | Status | Description | Features | Package | Q-Level |
| MKP 479 | Leaded film capacitor | Cap.range:E24;10nF-3.9μF; 630 VDC; |
TH / Radial | ||
| MKT 468 | Leaded film capacitor | Cap.range:E12;1nF-10μF; 1000 VDC; |
TH / Radial |
HEXFET Power MOSFET
| Product Name | Status | Description | Features | Package | Q-Level |
| IRF720 | Leaded MOSFET | Fast switching; 400 V; RDS(on) = 1.8 Ohm; ID = 3.3 A; |
TH / Radial TO-220AB |
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| IRF720S | SMD MOSFET | Fast switching; 400 V; RDS(on) = 1.8 Ohm; ID = 3.3 A; |
SMD TO-252 D2PAK |
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| IRF740 | Leaded MOSFET | Fast switching; 400 V; RDS(on) = 0.55 Ohm; ID = 10 A; |
TH / Radial TO-220AB |
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| IRF740 A | Leaded MOSFET | Fast switching; 400 V; RDS(on) = 0.55 Ohm; ID = 10 A; |
TH / Radial TO-220AB |
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| IRF740LC | Leaded MOSFET | Fast switching; 400 V; RDS(on) = 0.55 Ohm; ID = 10 A; |
TH / Radial TO-220AB |
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| IRF740S | SMD MOSFET | Fast switching; 400 V; RDS(on) = 0.55 Ohm; ID = 10 A; |
SMD TO-252 D2PAK |
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| IRF830 | Leaded MOSFET | Fast switching; 500 V; RDS(on) = 1.5 Ohm; ID = 4.5 A; |
TH / Radial TO-220AB |
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| IRF830 A | Leaded MOSFET | Fast switching; 500 V; RDS(on) = 1.4 Ohm; ID = 5 A; |
TH / Radial TO-220AB |
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| IRF830 A | SMD MOSFET | Fast switching; 500 V; RDS(on) = 1.5 Ohm; ID = 4.5 A; |
SMD TO-252 D2PAK |
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| IRF840 | Leaded MOSFET | Fast switching; 500 V; RDS(on) = 0.85 Ohm; ID = 8 A; |
TH / Radial TO-220AB |
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| IRF840 A | Leaded MOSFET | Fast switching; 500 V; RDS(on) = 0.85 Ohm; ID = 8 A; |
TH / Radial TO-220AB |
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| IRF840LC | Leaded MOSFET | Fast switching; 500 V; RDS(on) = 0.85 Ohm; ID = 8 A; |
TH / Radial TO-220AB |
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| IRF840S | SMD MOSFET | Fast switching; 500 V; RDS(on) = 0.85 Ohm; ID = 8 A; |
SMD TO-252 D2PAK |
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| IRFB11N50 A | Leaded MOSFET | Fast switching; 500 V; RDS(on) = 0.52 Ohm; ID = 11 A; |
TH / Radial TO-220AB |
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| IRFB13N50 A | Leaded MOSFET | Fast switching; 500 V; RDS(on) = 0.45 Ohm; ID = 14 A; |
TH / Radial TO-220AB |
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| IRFB16N50K | Leaded MOSFET | Fast switching; 500 V; RDS(on) = 0.285 Ohm; ID = 17 A; |
TH / Radial TO-220AB |
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| IRFR420APbF | SMD/Leaded MOSFET | Fast switching; 500 V; RDS(on) = 3 Ohm; ID = 3.3 A; |
SMD TO-252AA D-Pak |
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| IRFU420APbF | SMD/Leaded MOSFET | Fast switching; 500 V; RDS(on) = 3 Ohm; ID = 3.3 A; |
TH / Radial TO-251AA I-Pak |
High Ohmic, High Voltage Resistor
| Product Name | Status | Description | Features | Package | Q-Level |
| VR25 | leaded resistor | R up to 22 MOhm Voltage up to 1.6 kV Pulse Load up to 7 kV |
TH / Axial 2.5x6.5mm |
EN/IEC |
NPN transistor
| Product Name | Status | Description | Features | Package | Q-Level |
|
BUD842
|
NEW | NPN high-voltage switching transistor; simple switch off transistor (SWOT); optimized RBSOA;very low dynamic satura. |
VCEOsus = 400 V; VBE = 1050 V; Ic = 4 A |
SMD TO-252 DPAK |
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BUF644
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NPN high-voltage switching transistor | 100-kHz switching rate very low switching losses |
TH / Radial TO-220 |
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BUF654
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NPN high-voltage switching transistor | 100-kHz switching rate very low switching losses |
TH / Radial TO-220 |
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BUF742-S-069
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NPN high-voltage switching transistor | 100-kHz switching rate very low switching losses |
TH / Radial TO-220 |
PFC Diode
| Product Name | Status | Description | Features | Package | Q-Level |
| FES(F)16xT | Leaded/SMD rectifier diode | IF = 16 A; IFSM = 250 A; VF=0.975-1.5V;trr=35-50ns ; max. Tj = 150 °C; |
TH / Radial TO-220AC ITO-220AC |
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| FES(F)8xT | Leaded/SMD rectifier diode | IF = 8 A; IFSM = 125 A; VF=0.95-1.5V; trr=35-50ns ; max. Tj = 150 °C; |
TH / Radial TO-220AC ITO-220AC |
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| FESB16xT | Leaded/SMD rectifier diode | IF = 16 A; IFSM = 250 A; VF=0.975-1.5V;trr=35-50ns ; max. Tj = 150 °C; |
SMD TO-263AB |
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| FESB8xT | Leaded/SMD rectifier diode | IF = 8 A; IFSM = 125 A; VF=0.95-1.5V; trr=35-50ns ; max. Tj = 150 °C; |
SMD TO-263AB |
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| UH5JT | NEW | Leaded rectifier diode; max. Tj = 175 °C; |
IF = 5 A; IFSM = 60 A; VF = 1.39 V; trr = 25 ns; |
TH / Radial TO-220AC |
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| UH8JT | NEW | Leaded rectifier diode max. Tj = 175 °C; |
IF = 8 A; IFSM = 80 A; VF = 1.47 V; trr = 25 ns; |
TH / Radial TO-220AC |
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| UHB10FT | NEW | SMD rectifier diode max. Tj = 175 °C; |
IF = 10 A; IFSM = 180 A; VF = 0.83 V; trr = 25 ns; |
SMD TO-263AB |
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