SECONDARY SIDE - Power Factor Correction
Buffer Capacitor
| Product Name | Status | Description | Features | Package | Q-Level |
| EKV | C5: radial Al-electrolytic capacitor | Useful life > 10 kh at 105 °C; cap.range: 6.8 to 150 μF at 160 V to 450 V |
TH / Radial 10x16mm to 18x31.5mm |
Decoupling Capacitor
| Product Name | Status | Description | Features | Package | Q-Level |
| MKP 479 | C4: Leaded film capacitor | Cap.range: 10nF - 3.9μF; E24-series 630 VDC |
TH / Radial | ||
| MKT 468 | C4: Leaded film capacitor | Cap.range: 1 nF - 10 μF, E12-series; 1000 VDC |
TH / Radial |
HEXFET Power MOSFET
| Product Name | Status | Description | Features | Package | Q-Level |
| IRF720 | Leaded MOSFET | Fast switching; 400 V; RDS(on) = 1.8 Ohm; ID = 3.3 A; |
TH / Radial TO-220AB |
||
| IRF720S | SMD MOSFET | Fast switching; 400 V; RDS(on) = 1.8 Ohm; ID = 3.3 A; |
SMD TO-252 D2PAK |
||
| IRF740 | Leaded MOSFET | Fast switching; 400 V; RDS(on) = 0.55 Ohm; ID = 10 A; |
TH / Radial TO-220AB |
||
| IRF740A | Leaded MOSFET | Fast switching; 400 V; RDS(on) = 0.55 Ohm; ID = 10 A; |
TH / Radial TO-220AB |
||
| IRF740LC | Leaded MOSFET | Fast switching; 400 V; RDS(on) = 0.55 Ohm; ID = 10 A; |
TH / Radial TO-220AB |
||
| IRF740S | SMD MOSFET | Fast switching; 400 V; RDS(on) = 0.55 Ohm; ID = 10 A; |
SMD TO-252 D2PAK |
||
| IRF830 | Leaded MOSFET | Fast switching; 500 V; RDS(on) = 1.5 Ohm; ID = 4.5 A; |
TH / Radial TO-220AB |
||
| IRF830 A | Leaded MOSFET | Fast switching; 500 V; RDS(on) = 1.4 Ohm; ID = 5 A; |
TH / Radial TO-220AB |
||
| IRF830 A | SMD MOSFET | Fast switching; 500 V; RDS(on) = 1.5 Ohm; ID = 4.5 A; |
SMD TO-252 D2PAK |
||
| IRF840 | Leaded MOSFET | Fast switching; 500 V; RDS(on) = 0.85 Ohm; ID = 8 A; |
TH / Radial TO-220AB |
||
| IRF840 A | Leaded MOSFET | Fast switching; 500 V; RDS(on) = 0.85 Ohm; ID = 8 A; |
TH / Radial TO-220AB |
||
| IRF840LC | Leaded MOSFET | Fast switching; 500 V; RDS(on) = 0.85 Ohm; ID = 8 A; |
TH / Radial TO-220AB |
||
| IRF840S | SMD MOSFET | Fast switching; 500 V; RDS(on) = 0.85 Ohm; ID = 8 A; |
SMD TO-252 D2PAK |
||
| IRFB11N50 A | Leaded MOSFET | Fast switching; 500 V; RDS(on) = 0.52 Ohm; ID = 11 A; |
TH / Radial TO-220AB |
||
| IRFB13N50 A | Leaded MOSFET | Fast switching; 500 V; RDS(on) = 0.45 Ohm; ID = 14 A; |
TH / Radial TO-220AB |
||
| IRFB16N50K | Leaded MOSFET | Fast switching; 500 V; RDS(on) = 0.285 Ohm; ID = 17 A; |
TH / Radial TO-220AB |
||
| IRFR420APbF | SMD/Leaded MOSFET | Fast switching; 500 V; RDS(on) = 3 Ohm; ID = 3.3 A; |
SMD TO-252AA D-Pak |
NPN Transistor
| Product Name | Status | Description | Features | Package | Q-Level |
|
BUD842
|
NPN high-voltage switching transistor; simple switch off transistor (SWOT); optimized RBSOA;very low dynamic satura. |
VCEOsus = 400 V, VBE = 1050 V; Ic = 4 A |
SMD TO-252 DPAK |
||
|
BUF644
|
NPN high-voltage switching transistor | 100-kHz switching rate, very low switching losses |
TH / Radial TO-220 |
||
|
BUF654
|
NPN high-voltage switching transistor | 100-kHz switching rate, very low switching losses |
TH / Radial TO-220 |
||
|
BUF742-S-069
|
NPN high-voltage switching transistor | 100-kHz switching rate, very low switching losses |
TH / Radial TO-220 |
PFC Diode
| Product Name | Status | Description | Features | Package | Q-Level |
| FES(F)16xT | Leaded/SMD rectifier diode | IF = 16 A; IFSM = 250 A; VF = 0.975 to 1.5 V; trr=35-50ns; Tj<=150°C |
TH / Radial TO-220AC ITO-220AC |
||
| FES(F)8xT | Leaded/SMD rectifier diode | IF = 8 A; IFSM = 125 A; VF = 0.95 to 1.5 V; trr=35-50ns; Tj<=150°C |
TH / Radial TO-220AC ITO-220AC |
||
| FESB16xT | Leaded/SMD rectifier diode | IF = 16 A; IFSM = 250 A; VF = 0.975 to 1.5 V; trr=35-50ns; Tj<=150°C |
SMD TO-263AB |
||
| FESB8xT | Leaded/SMD rectifier diode | IF = 8 A; IFSM = 125 A; VF = 0.95 to 1.5 V; trr=35-50ns; Tj<=150°C |
SMD TO-263AB |
||
| UH10FT | NEW | Leaded rectifier diode max. Tj = 175 °C; |
IF = 10 A; IFSM = 180 A; VF = 0.83 V; trr = 25 ns; |
TH / Radial TO-220AC |
|
| UH5JT | NEW | Leaded rectifier diode max. Tj = 175 °C; |
IF = 5 A; IFSM = 60 A; VF = 1.39 V; trr = 25 ns; |
TH / Radial TO-220AC |
|
| UH8JT | NEW | Leaded rectifier diode max. Tj = 175 °C; |
IF = 8 A; IFSM = 80 A; VF = 1.47 V; trr = 25 ns; |
TH / Radial TO-220AC |
|
| UHB10FT | NEW | SMD rectifier diode max. Tj = 175 °C; |
IF = 10 A; IFSM = 180 A; VF = 0.83 V; trr = 25 ns; |
SMD TO-263AB |
Related Information





