RF SECTION - Duplexer
Attenuators
| Product Name | Status | Description | Features | Package | Q-Level |
| CZA04S | Surface Mount Chip Resistor Attenuator thick film technology; for frequencies up to 3 GHz; |
R = 50 ohms to 500 ohms; P = 40 mW to 75 mW; |
SMD 0402 |
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| CZA06S | Surface Mount Chip Resistor Attenuator | R = 50 ohms to 500 ohms; P = 40 mW to 75 mW; |
SMD 0603; |
Band-Switching Diodes
| Product Name | Status | Description | Features | Package | Q-Level |
| BA892V-02V | Single Band Switching Diodes for band switching up to 3 GHz |
VF = 1.1 V, IR = 20 nA; CD = 1 pF; |
SMD SOD-523 |
Inductors
| Product Name | Status | Description | Features | Package | Q-Level |
| IFCB-0402 | Thin film ceramic chip inductor | L = 1 nH to 22 nH; I = 90 mA to 700 mA; |
'0402 | ||
| ILC-0402 | High-frequency ceramic chip inductor; Multilayer; |
L = 1 nH to 100 nH; I = 100 mA to 300 mA; |
SMD 0402 |
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| IMC-0402 | High Q/SRF laser spiral coated inductor | L = 1 nH to 100 nH; I = 90 mA to 400 mA; Q = 14 to 21; |
'0402 |
RF Capacitors
| Product Name | Status | Description | Features | Package | Q-Level |
| HPC0201A | NEW | SMD silicon capacitor up to 15 GHz; High-performance; high-precision; |
VR = 25 V; C = 0.4 pF to 39 pF; |
0201 | |
| HPC0402A | NEW | SMD silicon capacitor up to 15 GHz; High-performance; high-precision; |
VR = 50 V; C = 0.1 pF to 180 pF; |
0402 | |
| HPC0402B/C | NEW | SMD silicon capacitor up to 15 GHz; High-performance; high-precision; |
VR = 25 V; C = 0.1 pF to 180 pF; very low profile; |
0402 | |
| HPC0603A | NEW | SMD silicon capacitor up to 15 GHz; High-performance; high-precision; |
VR = 50 V; C = 0.8 pF to 560 pF; |
0603 | |
| VJ C0G (NP0) Dielectric MLCC |
Monolithic ceramic chip capacitor | VR = 25 V to 100 V; C = 1 pF to 100 pF; |
SMD 0402 |
RF Pin Diodes
| Product Name | Status | Description | Features | Package | Q-Level |
| BAR63V-02V | Single Band Switching Diodes as signal attenuator / switch up to 3GHz |
VF = 1.2 V, IR = 10 nA, CD = 0.28 pF; |
SMD SOD-523 |
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| BAR64V-02V | Single Band Switching Diodes as signal attenuator / switch up to 3GHz |
VF = 1.1 V, IR = 50 nA, CD = 0.5 pF; |
SMD SOD-523 |
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| BAR65V-02V | Single Band Switching Diodes as signal attenuator / switch up to 3GHz |
VF = 1.1 V, IR = 20 nA, CD = 0.65 pF; |
SMD SOD-523 |





