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Power Supply - CPU/DSP Power Supply

Dual MOSFETs

Product Name Status Description Features Package Q-Level
Si4214DDY Dual N-Channel 30-V (D-S) MOSFET rDS(on) = 0.0195 Ohm;
Qgd=7.1nC
SMD
SO-8

Si4830CDY Dual N-Channel; 30-V (D-S) Mosfet
plus Schottky Diode
rDS(on) = 0.020 Ohm;
Qgd=7.3nC
SMD
SO-8

Si4834BDY Dual N-Ch. mosfet plus Schottky diode; N-Channel; 30-V (D-S);
rDS(on) = 0.022 Ohm;
Qgd=2.5nC
SMD
SO-8

Si4914DY Dual N-Ch. MOSFET plus Schottky diode, N-Channel; 30-V (D-S);
rDS(on) = 0.022 Ohm;
Qgd=2.3nC
SMD
SO-8

Si7270DP NEW Dual N-Channel; 30-V (D-S) MOSFET TrenchFET
rDS(on) = 0.021 Ohm;
Qgd= 6.6
SMD
PPAK SO-8


High Sid MOSFETs

Product Name Status Description Features Package Q-Level
Si4178DY NEW N-Channel 30-V (D-S) Mosfet TrenchFET
RDS(on)= 0.021 Ohm
Qgd= 3.7nC
SO-8

High Side MOSFETs

Product Name Status Description Features Package Q-Level
Si4134DY N-Channel; 30-V (D-S) Mosfet rDS(on) = 0.014 Ohm;
Qgd=7.3nC
SMD
SO-8

Si4162DY N-Channel 30V-( D-S) MOSFET N-Channel; 30-V (D-S);
rDS(on) = 0.0079 Ohm;
Qg=8.8 nC
SMD
SO-8

Si4174DY NEW N-Channel; 30-V (D-S) Mosfet TrenchFET
rDS(on) = 0.0095 Ohm;
Qgd= 8nC
SMD
SO-8

Si4174DY NEW N-Channel 30-V (D-S) Mosfet
Extr.Low Switching Loss
TrenchFET
rDS(on) = 0.0095 Ohm;
Qgd= 8nC
SMD
SO-8

Si4178DY NEW N-Channel 30-V (D-S) Mosfet rDS(on) = 0.021 Ohm;
Qgd=3.7nC
SMD
SO-8

Si4684DY N-Ch. Reduced Qg, Fast Switching WFET;
Extr.Low Switching Loss
N-Channel; 30-V (D-S);
rDS(on) = 0.0094 Ohm;
Qgd=2.8nC
SMD
SO-8

Si4686DY NEW N-Ch. Reduced Qg, Fast Switching WFET;
Extr.Low Switching Loss
N-Channel; 30-V (D-S);
rDS(on) = 0.0095 Ohm;
Qgd=2.8nC
SMD
SO-8

Si4812BDY N-Ch. Reduced Qg, Fast Switching MOSFET N-Channel; 30-V (D-S);
rDS(on) = 0.021 Ohm;
Qgd=2.1nC
SMD
SO-8

Si7230DN N-Ch. Reduced Qg, Fast Switching MOSFET
smaller package;
N-Channel; 30-V (D-S);
rDS(on) = 0.016 Ohm;
Qgd=4.3nC
SMD
PowerPAK 1212

SiR172DP N-Channel 30-V (D-S);MOSFET; TrenchFET
rDS(on) = 0.0089 Ohm;
Qgd=9.8nC
SMD
PPAK SO-8

SiR462DP N-Channel; 30-V (D-S) MOSFET rDS(on) = 0.0079 Ohm;
Qg=8.8nC
SMD
PPAK SO-8

SiS402DN N-Channel; 30-V (D-S) MOSFET rDS(on) = 0.006 Ohm;
Qgd=12nC
SMD
PPAK 1212-8

SiS412DN NEW N-Channel; 30-V (D-S) MOSFET; rDS(on) = 0.024 Ohm;
Qgd=3.8nC
SMD
PPAK 1212-8


Low Side MOSFETs

Product Name Status Description Features Package Q-Level
Si4156DY N-Channel 30-V (D-S) MOSFET rDS(on) = 0.006 Ohm; SMD
SO-8

Si4160DY NEW N-Channel 30-V (D-S) MOSFET N-Channel; 30-V (D-S);
rDS(on) = 0.0049 Ohm;
SMD
SO-8

Si4162DY N-Channel 30-V (D-S)MOSFET TrenchFET
rDS(on) = 0.0079 Ohm;
Qg=18nC
SMD
SO-8

Si4164DY NEW N-Channel 30V(D-S) MOSFET TrenchFET
rDS(on) = 0.0032 ohm
Qgd= 26.5nC
SMD
SO-8

Si4174DY NEW N-Channel 30-V (D-S) Mosfet N-Channel; 30-V (D-S);
rDS(on) = 0.0095 Ohm;
Qgd=8 nC
SMD
SO-8

Si4178DY NEW N-Channel 30-V (D-S) Mosfet N-Channel; 30V-(D-S)
rDS(on)=0.021 ohm
ID= 12a
SO-8
Si4634DY N-Channel MOSFET; Reduced Rds;
Extr.Low Switching Loss
N-Channel; 30-V (D-S);
rDS(on) = 0.0067 Ohm;
SMD
SO-8

Si4686DY N-Ch. Reduced Qg, Fast Switching WFET;
Extr.Low Switching Loss
N-Channel; 30-V (D-S);
rDS(on) = 0.0095 Ohm;
Qgd=2.8nC
SMD
SO-8

Si4800BDY N-Channel MOSFET; Reduced Rds; N-CH,30V,Rds on=0.03Ohm, SO-8
Si4812BDY N-Channel Reduced Rds N-Channel; 30-V (D-S);
rDS(on) = 0.016 Ohm;
SMD
SO-8

Si7114ADN NEW N-Channel 30-V (D-S) Mosfet rDS(on) = 0.0075 Ohm;
Qgd=12nC
SMD
PPAK 1212-8

Si7634BDP N-Channel MOSFET;Reduced Rds N-Channel; 30-V (D-S);
rDS(on) = 0.0052 Ohm;
SMD
PPAK SO-8

Si7716ADN NEW N-Channel 30-V (D-S) Mosfet TrenchFET Gen III
rDS(on) = 0.0135 Ohm;
Qgd=7.3nC
SMD
PPAK 1212-8

SiR466DP NEW N-Channel 30-V (D-S) MOSFET TrenchFET
rDS(on) = 0.0035 Ohm;
Qgd= 21.5nC
SMD
PPAK SO-8

SiR818DP N-Channel 30-V (D-S) Mosfet rDS(on) = 0.0028 Ohm;
Qgd = 30.5nC
SMD
PPAK SO-8

SiS402DN N-Channe; 30-V (D-S) Mosfet rDS(on) = 0.006 Ohm;
Qgd=12nC
SMD
PPAK 1212-8

SiS412DN NEW N-Channel 30-V (D-S) Mosfet
Ex
rDS(on) = 0.024 Ohm;
Qgd=3.8nC
SMD
PPAK 1212-8


Resistors

Product Name Status Description Features Package Q-Level
WSL0805 small resistance, high power 1/8 W POWER;
R=0.01 to 0.2 Ohm;
SMD
0805

WSL2010-18 small resistance, high power 2010 size, Up to 1w power SMD 2010
WSL2512-18 small resistance, high power 2512 size,up to 2w POWER SMD 2512

Schottky Diodes

Product Name Status Description Features Package Q-Level
B140 low VF , low leakage current. 10A; 40V; SMD
SMA

B240A low VF , low leakage current. 20A; 40V; SMD
SMA

B340A low VF , low leakage current. 30A,40V; SMD
SMA

SS1P4 Schottky Diodes;
low leakage current;
small Package;
10,40V SMP
SS2P4 Schottky Diodes;
low VF; low leakage current;
small Package;
20A,40V SMP
SS3P4 Schottky Diodes;
low VF; low leakage current;
small Package;
30A, 40V SMP

Shielded Power Inductors

Product Name Status Description Features Package Q-Level
IHLP1616-01 NEW High current, low profile inductor
low DCR; Shielded;
Rated current up to 11A. SMD
IHLP2525CZ-01 High current, low profile inductors;
low DCR; Shielded;
Rated current up to 25A, SMD
IHLP4040DZ-01 High current, low profile inductors;
low DCR; Shielded;
up to 100uH;
IDC up to 40A;
SMD
IHLP4040DZ-11 High current, low profile inductors;
low DCR; Shielded;
up to 100uH;
IDC up to 40A;
SMD

Switching Diode

Product Name Status Description Features Package Q-Level
1N4148WS-V Small signal fast switching diodes; 500mA current, Vf=1.0 V;
Vrrm=75 V;
SMD
SOD-323

BAT54A-V Small Signal Schottky Diodes;
Single & Dual;
rated current 200mA;
VR 30v, Vf=0.32
SMD
SOT-23

BAT54W-V Small Signal Schottky Diode; Single; rated current 200mA;
VR 30v, Vf=0.32
SMD
SOD123

BAV99-V Small Signal Fast Switching Diodes; rated current 50 mA;
Vrrm 70 V;
SMD
SOT-23