VishayOne of the world's largest manufacturers of discrete semiconductors and passive components
Vishay ProductsVishay ProductsCompany InfoCompany InfoCompany Info
Company Info:Press Room:2002 Releases:New PowerPAK SO-8 Power MOSFETs
For more information:
Media contact: Bob Decker, Wall Street Communications
phone 1.415.409.0233  fax 1.650.618.1512  e-mail bob.decker@wallstcom.com
 

New PowerPAK™ SO-8 Power MOSFETs Provide Industry-Best Specifications for Point of Load DC-to-DC Conversion Applications

SANTA CLARA, CALIFORNIA - October 4, 2002 - To address the trend toward higher system power requirements and lower dc voltage levels in communications systems, Siliconix incorporated (NASDAQ: SILI), an 80.4%-owned subsidiary of Vishay Intertechnology, Inc. (NYSE: VSH) today announced three new PowerPAK™ power MOSFETs intended for Point of Load (POL) dc-to-dc conversion applications in fixed telecom systems.

As POL devices, the new Vishay Siliconix MOSFETs are designed for use in low-voltage step-down applications in 5-V and 3.3-V distributed bus architectures. Because switching the low-voltage rail on the secondary bus tends to cause the highest switching power losses within the system, it is important to use devices with low breakdown and gate-to-source voltages. The low VDS and VGS ratings of these new devices ensure minimal on-resistance and gate charge, resulting in better switching efficiency for this low-voltage environment.

To accommodate a variety of circuit topologies and allow for the best possible use of board space, the 12-V TrenchFET® power MOSFETs announced today include a single n-channel (Si7882DP), a dual n-channel (Si7940DP), and a complementary (Si7540DP) device.

Packaged in the low thermal resistance PowerPAK SO-8, the Si7540DP, Si7882DP, and Si7940DP all offer industry-low on-resistance values. The PowerPAK devices' on-resistance times gate charge products are industry-best as well, resulting in lower switching and conduction losses and thus higher-efficiency dc-to-dc circuits. The new devices are optimized to provide enhanced efficiency at switching speeds greater than 500 kHz.

All three devices offer significantly lower thermal resistance compared to MOSFETs in the standard SO-8 package, while measuring just 6.15 mm by 5.15 mm with a low 1.07-mm height profile.

Device Configuration VDS (V) VGS (V) RDS(on)
(m Ω)
(4.5-V rating)
Typ. Gate Charge
(nC)
rDS(on) x Gate Charge
Si7882DP Single N-Channel 12 8 5.5 21 115.5
Si7940DP Dual N-Channel 12 8 17 11.5 195.5
Si7540DP N-Channel
and
P-Channel
12 8 17 11.5 195.5
-12 -8 32 (at -4.5 V) 13 416

Samples and production quantities of the Si7540DP, Si7882DP, and Si7940DP are available now, with a lead time of 8-10 weeks for larger orders.

Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, rectifiers, transistors, and optoelectronics and selected ICs) and passive electronic components (resistors, capacitors, inductors, sensors, and transducers). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, and medical markets. Its product innovations, successful acquisition strategy, and ability to provide "one-stop shop" service have made Vishay a global industry leader. Vishay can be found on the Internet at http://www.vishay.com.

###

PowerPAK is a trademark of Siliconix incorporated. TrenchFET is a registered trademark of Siliconix incorporated.

 
MOSFETs
About Vishay
Brands
Careers
Contacts
Ethics
Investor Relations
Product News
2008 releases
2007 releases
2006 releases
2005 releases
2004 releases
*2003 releases
*2002 releases
*2001 releases
*2000 releases
*1999 releases
Trade Shows
Vishay History
Products A-Z
Company Info:   Press ·  Investors ·  Contacts ·  More...
Privacy & Legal · Your Account