Next-Generation Vishay Siliconix P-Channel TrenchFET® Power MOSFETs Offer Industry-Low On-Resistance Down To 29 Milliohms

New Devices Offered in PowerPAK® SC-70, SC-89, and Standard SC-70

MALVERN, Pa. — October 10, 2007 — A new family of p-channel MOSFETs that sets a new record for lowest on-resistance per unit area was announced today by Vishay Intertechnology, Inc. (NYSE: VSH).

Built on a new-generation TrenchFET® silicon technology, the new Vishay Siliconix devices offer maximum on-resistance ratings of 29 milliohms in the PowerPAK® SC-70 package (2.05 mm by 2.05 mm) and of 80 milliohms in the standard SC-70 (2.0 mm by 2.1 mm) and 130 milliohms in the SC-89 (1.6 mm by 1.6 mm).

Compared to the next-best power MOSFETs on the market, specifications for these new Vishay Siliconix devices represent an improvement of up to 63 %.

The new p-channel TrenchFETs will be used for load switching, PA switching, and battery switching in portable end products including cell phones, MP3 players, PDAs, and digital still cameras, where their low conduction losses will help to extend battery run times and their miniaturized packages will save valuable board space, allowing increased functionality.

In portable electronic systems, p-channel MOSFETs perform an essential role by turning off features such as the display or the power amplifier when these are not being used, or by switching the system from active mode to sleep mode, and thus saving on battery life. These new Vishay Siliconix devices perform these switching tasks with less power than any previous p-channel power MOSFETs on the market since their very low on-resistance ratings translate directly into lower power conduction losses.

The p-channel TrenchFETs released today include single-channel devices with breakdown voltage ratings of -12 V, -20 V, and -30 V. Offered in the 6-pin SC-89, standard SC-70, and PowerPAK® SC-70 packages, all are lead (Pb)-free to meet today.s environmental concerns.

Device Specification Table

Part Number*	V_DS (V)	V_GS (V)	R_DS(on) @ VGS =				Package type
Part Number*	V_DS (V)	V_GS (V)	−10 V (Ω)	−4.5 V (Ω)	−2.5 V (Ω)	−1.8 V (Ω)	Package type
Si1065X	-12	±8		0.130	0.158	0.205	SC-89
Si1067X	-20	±8		0.150	0.166	0.214	SC-89
Si1069X	-20	±12		0.184	0.258		SC-89
Si1071X	-30	±12	0.167	0.188	0.244		SC-89
Si1073X	-30	±20	0.173	0.243			SC-89
Si1469DH	-20	±12	0.080	0.100	0.155		SC-70
Si1471DH	-30	±12	0.100	0.120	0.175		SC-70
Si1473DH	-30	±20	0.100	0.145			SC-70
SiA413DJ	-12	±8		0.029	0.034	0.044	PowerPAK SC-70
SiA421DJ	-30	±20	0.035	0.056			PowerPAK SC-70

*Add suffix T1-E3 to order

Vishay Siliconix was the first supplier to introduce TrenchFET technology. With these new devices, the company adds to a rich portfolio which includes both n-channel and p-channel TrenchFETs in a wide range of package types.

Samples and production quantities of the new p-channel TrenchFET power MOSFETs are available now, with lead times of 12 to 14 weeks for larger orders.

Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, rectifiers, transistors, and optoelectronics and selected ICs) and passive electronic components (resistors, capacitors, inductors, sensors, and transducers). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, and medical markets. Its product innovations, successful acquisition strategy, and ability to provide "one-stop shop" service have made Vishay a global industry leader. Vishay can be found on the Internet at http://www.vishay.com.

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TrenchFET and PowerPAK are registered trademarks of Siliconix incorporated.