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For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

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Vishay Siliconix TrenchFET® Gen III Power MOSFETs Honored with EN-Genius Product of the Year Award


For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

Sales contact: 

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MALVERN, PENNSYLVANIA — April 1, 2009 — Vishay Intertechnology, Inc. (NYSE: VSH) today announced that devices in its new TrenchFET® Gen III power MOSFET family have won a Product of the Year award from EN-Genius Network (www.en-genius.net), a leading information source for electronic design engineers.

Being honored with the EN-Genius award for Best Improvement in Power Devices are a group of TrenchFET Gen III devices that are the first to offer TurboFET™ technology, which utilizes a new charge-balanced drain structure to help notebook computers, servers, and other systems use energy and/or circuit board space more efficiently.

“The reduction in gate charge in these third-generation parts is significant and will allow a lot of existing designs to migrate to higher switching frequencies, maintaining efficiency while reducing the real estate used by circuit passives − or by increasing efficiency at the presently-used switching frequencies of those designs,” EN-Genius said.

Recipients of the EN-Genius 2008 Product of the Year Awards were selected by Paul McGoldrick, EN-Genius editor in chief, and his editorial colleagues Lee Goldberg and Alex Mendelsohn, from products reviewed by the publication throughout the year.

Vishay’s TurboFET™ technology enables devices with an industry-leading combination of low on-resistance, which translates into lower conduction losses, and low gate charge. For MOSFETs in dc-to-dc converters, lower gate charge translates into more efficient switching, helping to save power in notebook computers, voltage regulator modules (VRMs), servers, and other systems using point-of-load (POL) power conversion. It also gives the designer the option to operate at higher frequencies, which enables the use of smaller passive components.

Links to TurboFET product datasheets:

SiS426DN
SiR496DP
Si7718DN
Si7784DP

Samples and production quantities of the new TrenchFET Gen III power MOSFETs with TurboFET technology are available now, with lead times of 10 to 12 weeks for large orders.

Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.

http://twitter.com/vishayindust
http://www.facebook.com/VishayIntertechnology

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For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

Sales contact: 

This release in: