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Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

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Vishay Wins EDN China Innovation Awards for Power Metal Strip® Resistors and 3rd Generation TrenchFET® Power MOSFETs


WSLT2010...18 award

Products mentioned:

WSLT2010...18
For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

Sales contact: 
Sales contact: 

MALVERN, PENNSYLVANIA — Nov. 18, 2009 — Vishay Intertechnology, Inc. (NYSE: VSH) today announced that it has won two 2009 EDN China Innovation Awards, respectively for recently introduced Power Metal Strip® resistors and TrenchFET® power MOSFETs.

In the Passive Component, Connector and Sensor category, Vishay was honored with a Leading Product award for a new high-temperature 1-W surface-mount Power Metal Strip® resistor that is the industry’s first current sensing resistor in the 2010 case size to operate over a temperature range of −65 °C to +275 °C. The WSLT2010...18 resistor features a very low 10-mΩ to 500-mΩ resistance value range, a tight tolerance down to ±0.5 %, and low TCR values down to ±75 ppm/°C. Target applications for the WSLT2010...18 include automotive engine and transmission controls, audio electronics, climate controls, and anti-lock brakes, as well as industrial oil/gas well drilling, including down hole test/measurement equipment.

In the Power Device and Module category, Vishay won a Leading Product award for its TrenchFET Gen III power MOSFET technology, which enables devices that set new records for efficient use of power in dc-to-dc conversion, battery management and load switching circuits in computers, servers, telecom, power supplies, handheld electronics, and industrial applications.

The industry’s first supplier to introduce Trench power MOSFETs, Vishay Siliconix TrenchFET intellectual property includes numerous patents, including fundamental technology patents dating from the early 1980s. Each new generation of TrenchFET technology yields products that raise the bar for power MOSFET performance in a wide range of computing, communications, consumer electronics, and many other applications.

The EDN China Innovation Awards were presented today as part of the EDN China Innovation Conference, which took place at the Shenzhen Seaview O·City Hotel in Shenzhen, China. Further information is available at www.ednchina.com.

Vishay Intertechnology, Inc., a Fortune 1000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, MOSFETs, and infrared optoelectronics) and passive electronic components (resistors, inductors, and capacitors). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, power supplies, and medical markets. Vishay’s product innovations, successful acquisition strategy, and "one-stop shop" service have made it a global industry leader. Vishay can be found on the Internet at www.vishay.com.

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Power Metal Strip and TrenchFET are registered trademarks of Vishay Intertechnology, Inc., and Siliconix incorporated, respectively.

For more information:
Media contact -  Bob Decker, Redpines
Phone:  1.415.409.0233 
Fax:  1.650.618.1512 
E-mail:  bob.decker@redpinesgroup.com

Sales contact: 
Sales contact: