V(B,F,I)T1080S, V(B,F,I)T1080C, V(B,F,I)T2080S, V(B,F,I)T2080C, V(B,F,I)T3080S, and V(B,F,I)T3080C 80-V TMBS® Rectifiers
New 80-V Trench MOS Barrier Schottky Rectifiers in Power Packages
Vishay Intertechnology, Inc. (NYSE: VSH) announces a new series of 80-V TMBS® rectifiers in power packages with current ratings from 10 A to 30 A with current ratings from 10 A to 30 A.
Product Benefits:
- Trench MOS Schottky technology
- Superior low forward voltage drop, low power losses
- High efficiency operation compared to conventional planar Schottky devices
- Superior avalanche capability
Key Device Specifications:
- VR rating of 80 V
- Current ratings from 10 A to 30 A
- Four power package options available:
- TO-220AB
- ITO-220AB
- TO-262AA
- TO-263AB
- 150 °C maximum operation junction temperature
- Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
- Configuration: single chip and dual chip, center tap
- Meet MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
- Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA packages)
80-V Trench MOS Barrier Schottky Rectifier Specifications Summary Table
| Vishay P/N | IF (A) |
VRRM (V) |
VF at IF and TJ | IFSM (A) |
TJ max (°C) |
||
|---|---|---|---|---|---|---|---|
| VF (V) |
IF (A) |
TA (°C) |
|||||
| V(B,F,I)T1080S | 10 | 80 | 0.60 | 10 | 125 | 100 | 150 |
| V(B,F,I)T1080C | 10 | 80 | 0.57 | 5 | 125 | 80 | |
| V(B,F,I)T2080S | 20 | 80 | 0.70 | 20 | 125 | 150 | |
| V(B,F,I)T2080C | 20 | 80 | 0.60 | 10 | 125 | 100 | |
| V(B,F,I)T3080S | 30 | 80 | 0.73 | 30 | 125 | 200 | |
| V(B,F,I)T3080C | 30 | 80 | 0.65 | 15 | 125 | 150 | |
Market Applications
- Secondary rectifier and freewheeling diode for ac-to-dc and dc-to-dc converters
- High-frequency power adapter and SMPS
Availability
Samples are available upon customer request
Sales, Technical Questions...
