MENU

Diodes - TVS and ESD Protection - LLP1006-2M


Diodes - TVS and ESD Protection - LLP1006-2M
Part number
Circuit Diagram
Package
Reverse Standoff Voltage VRWM
(V)
Reverse Current IR at VRWM
(μA)
Reverse Breakdown Voltage VBR at 1 mA
(V)
Peak Pulse Current IPPM at tp = 8/20μs acc. IEC 61000-4-5
(A)
Peak Pulse Power PPP at tp = 8/20μs acc. IEC 61000-4-5
(W)
Capacitance CD at VR = 0 V VAC < 100 mV f = 1 MHz
(pF)
ESD Immunity acc. IEC 61000-4-2
(kV)
Number of Protected Lines
Operating Junction Temperature Range
( C)
AEC-Q101 Qualified
Datasheet
info
LLP1006-2M 3.3 0.1 6.0 4.5 95 0.36 18 1 -55 to +125 No
Datasheet
info
LLP1006-2M 5.5 0.05 7 2.0 34 0.33 15 1 -40 to +125 No
Datasheet
info
LLP1006-2M 5.5 0.1 6.0 4.5 95 0.36 18 1 -55 to +125 No
Datasheet
info
LLP1006-2M 3.5 0.1 5.8 3.5 40 12.5 18 1 -40 to +125 No
Datasheet
info
LLP1006-2M 5.5 0.1 6 3.0 38 10 30 1 -55 to +145 No