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| All Diodes press releases |
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May 19,
2006
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Vishay's New 60-A, 100-V Dual High-Voltage Trench MOS Barrier Schottky (TMBS™) Rectifier Delivers Industry-Low Forward Voltage Drop (Per Leg) of 0.70 V at 30 A and 125 °C
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December 14,
2005
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Vishay Releases Industry's First Dual High-Voltage TMBS Trench MOS Barrier Schottky Rectifier, Providing Lowest Forward Voltage Drop of 0.375 V
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November 17,
2004
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Vishay's New Dual High-Voltage Schottky Rectifiers Feature Industry-Best
200-V Reverse Voltage and 20-A Forward Current
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July 23,
2004
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Vishay's New Dual High-Voltage, High-Current Schottky Rectifier Reduces Power Loss With 100-V Reverse Voltage, 60 A Forward Current Ratings
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Sept. 05,
2003
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New 150-V High-Barrier-Height Schottky Rectifiers Offer Low Forward Voltage Drop, Low Leakage, and Maximum Junction Temperature of 175°C
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April 04,
2003
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New H-Type Schottky Rectifiers Feature Forward Voltage Drop as Low as 0.49 V, Leakage Current Down to 3.0 mA, and Operating Junction Temperatures up to
175°C
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