*May 28, 2012
*ECN S12-1252, Rev. A
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
.subckt Si4833BDY d g s a k
x1 d g s Si4833BDY_mos
x2 a k    Si4833BDY_schottky
.ends Si4833BDY
.SUBCKT Si4833BDY_mos D G S 
M1 3 GX S S PMOS W= 830000u L= 0.25u 
M2 S GX S D NMOS W= 830000u L= 0.45u 
R1 D 3 3.800e-02 -8.669e-03 7.269e-06 
CGS GX S 1.789e-10 
CGD GX D 1.894e-11 
RG G GY 7.3
RTCV 100 S 1e6 4.516e-04 -2.859e-06 
ETCV GY GX 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD D S DBD 
**************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 5e-8 
+ RS = 1.000e-06 KP = 2.2519e-06 NSUB = 2.7364e+16 
+ KAPPA = 3.481e-04 ETA = 1e-4 NFS = 2.062e+12 
+ LD = 0 IS = 0 TPG = -1) 
*************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 5e-8 
+NSUB = 1.2342e+16 IS = 0 TPG = -1 ) 
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 2.000e-08 TREF = 25 BV = 31 
+RS = 1.746e-02 N = 1.281e+00 IS = 9.833e-11 
+EG = 8.027e-01 XTI = 9.999e+00 TRS = 1.000e-05 
+CJO = 1.501e-10 VJ = 3.662e-01 M = 3.103e-01 ) 
.ENDS Si4833BDY_mos  
.subckt Si4833BDY_schottky 7 5
r1 7 1 7.97e-02 tc=2.32e-02,-1.52e-04
d1 1 5 sdsm
r2 7 2 1.05 tc=0.6,1.96e-02
d2 2 5 sdlg
.model sdsm d (
+is=1.81e-06 n=9.32e-01 ik=1 eg=6.23e-01
+xti=2.19e-01 
+bv=50 ibv=1e-1 tlev=1)
.model sdlg d (
+is=1.95e-05 n=1.61 ik=1 eg=4.9e-01
+xti=10
+bv=50 ibv=1e-1 tlev=1
+vj=0.233 cjo=261e-12 m=0.393)
.ends Si4833BDY_schottky