*Nov 21, 2011
*Doc. ID: 63632, ECN S11-2256, Rev. A
*File Name: Si8100DB_PS.txt and Si8100DB_PS.lib
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet.  Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
.SUBCKT Si8100DB D G S 
M1 3 GX S S NMOS W= 3095923u L= 0.25u 
M2 S GX S D PMOS W= 3095923u L= 2.050e-07 
R1 D 3 4.234e-03 TC=5.172e-03 3.778e-06 
CGS GX S 8.543e-10 
CGD GX D 4.246e-11 
RG G GY 1.8
RTCV 100 S 1e6 TC=-2.780e-04 -6.901e-07 
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD 
**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 5e-8 
+ RS = 5.201e-03 KP = 2.361e-05 NSUB = 1.0035e+17 
+ KAPPA = 1.000e-06 ETA = 1.073e-03 NFS = 5.786e+11 
+ LD = 0 IS = 0 TPG = 1) 
*************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 5e-8 
+NSUB = 2.185e+16 IS = 0 TPG = -1 ) 
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 2.000e-08 T_MEASURED = 25 BV = 26 
+RS = 5.116e-03 N = 1.199e+00 IS = 2.212e-10 
+EG = 1.190e+00 XTI = 1.064e+00 TRS1 = 2.696e-03 
+CJO = 8.738e-10 VJ = 6.328e-01 M = 3.704e-01 ) 
.ENDS