*Jan 23, 2012 *Doc. ID: 63733, ECN S12-0129, Rev. A *File Name: Si1922EDH_PS.txt and Si1922EDH_PS.lib *This document is intended as a SPICE modeling guideline and does not *constitute a commercial product datasheet. Designers should refer to the *appropriate datasheet of the same number for guaranteed specification *limits. .SUBCKT Si1922EDH D G S x1 D G S Si1922EDH_mos x2 G S Si1922EDH_esd .ENDS Si1922EDH .SUBCKT Si1922EDH_mos D G S M1 3 GX S S NMOS W= 78665u L= 0.25u M2 S GX S D PMOS W= 78665u L= 7.852e-07 R1 D 3 1.418e-01 TC=4.402e-03 8.059e-06 CGS GX S 19e-13 CGD GX D 5.441e-13 RG G GY 1.9 RTCV 100 S 1e6 TC=2.108e-04 5.861e-07 ETCV GX GY 100 200 1 ITCV S 100 1u VTCV 200 S 1 DBD S D DBD **************************************************************** .MODEL NMOS NMOS ( LEVEL = 3 TOX = 1.7e-8 + RS = 5.444e-03 KP = 4.194e-05 NSUB = 1.240e+17 + KAPPA = 5.908e-02 ETA = 4.369e-05 NFS = 1.640e+12 + LD = 0 IS = 0 TPG = 1) *************************************************************** .MODEL PMOS PMOS ( LEVEL = 3 TOX = 1.7e-8 +NSUB = 9.908e+13 IS = 0 TPG = -1 ) **************************************************************** .MODEL DBD D ( +FC = 0.1 TT = 2.000e-08 T_MEASURED = 25 BV = 21 +RS = 1.000e-01 N = 1.665e+00 IS = 1.000e-07 +EG = 9.022e-01 XTI = 2.955e-01 TRS1 = 2.459e-03 +CJO = 200e-12 VJ = 0.38 M = 0.28 ) .ENDS Si1922EDH_mos .subckt Si1922EDH_esd 1 2 r1 1 9 9.422e+06 TC= -7.063e-03 d1 9 2 dleak 1 .MODEL dleak d (IS = 4.652e-10 XTI = 5.768e+02 EG = 1.17 + T_MEASURED=25 TBV1 = 0 N = 4.541e+01 BV = 50) r2 1 10 2.712e+02 TC= -4.115e-03 d3 11 10 dout 0.514 d4 11 12 dout 0.514 d5 13 12 dout 0.575 d6 13 2 dout 0.575 .MODEL dout D (IS = 1.763e-10 XTI = 1.433e+01 EG = 1.17 + T_MEASURED = 25 TBV1 = -3.285e-03 N = 2.898e+00 BV = 6.560e+00 ) .ends Si1922EDH_esd