********************************
* Copyright:                   *
* Vishay Intertechnology, Inc. *
********************************
*May 20, 2015
*ECN S15-1219, Rev. C
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
.SUBCKT SiS890DN D G S 
M1 3 GX S S NMOS W= 1288992u L= 0.25u 
M2 S GX S D PMOS W= 1288992u L= 3.913e-07 
J1 D S 3 JD 
.MODEL JD NJF (VTO = -3.000e+00 BETA = 1.061e+01 LAMBDA = 2.688e-02 
+BETATCE = -8.922e-01 VTOTC = 1.013e-02 IS = 1e-18 N = 10 ) 
CGS GX S 5.785e-10 
CGD GX D 7.120e-12 
RG G GY 0.9 
RTCV 100 S 1e6 -4.294e-05 2.615e-07 
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD 
**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 5e-8 
+ RS = 0 KP = 9.113e-06 NSUB = 1.391e+17 
+ KAPPA = 3.119e-02 ETA = 1e-4 NFS = 6.184e+11 
+ LD = 0 IS = 0 TPG = 1 CAPOP = 12 ) 
*************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 5e-8 
+NSUB = 2.517e+16 IS = 0 TPG = -1 CAPOP = 12 ) 
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 1.180e-08 TREF = 25 BV = 101 
+RS = 3.634e-03 N = 1.070e+00 IS = 3.685e-12 
+EG = 8.296e-01 XTI = 9.973e+00 TRS = 1.000e-05 
+CJO = 6.924e-10 VJ = 1.650e+01 M = 7.210e-01 ) 
.ENDS 
