*September 22, 2008
*Doc. ID: 64386, ECN S-82197, Rev. A
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product data sheet.  Designers should refer to the
*appropriate data sheet of the same number for guaranteed specification
*limits. 
.SUBCKT Si4830CDY D1 G1 S1 D2 G2 S2 
X1    D1 G1 S1 Si4830CDYC1
X2    D2 G2 S2 Si4830CDYC2
.ENDS Si4830CDY 
.SUBCKT Si4830CDYC1  D G S 
M1 3 GX S S NMOS W= 1710624u L= 0.25u 
M2 S GX S D PMOS W= 1710624u L= 2.167e-07 
R1 D 3 1.369e-02 4.270e-03 6.053e-06 
CGS GX S 6.496e-10 
CGD GX D 3.510e-11 
RG G GY 1.2 
RTCV 100 S 1e6 1.368e-03 -4.578e-07 
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD 
**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 5e-8 
+ RS = 0 KP = 1.131e-05 NSUB = 2.554e+17 
+ KAPPA = 1e-2 ETA = 1e-4 NFS = 8e11 
+ XJ = 5e-7 LD = 0 IS = 0 TPG = 1) 
*************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 5e-8 
+NSUB = 1.089e+16 IS = 0 TPG = -1 ) 
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 1.07e-08 TREF = 25 BV = 31 
+RS = 9.253e-03 N = 1.097e+00 IS = 6.286e-12 
+EG = 1.199e+00 XTI = 5.666e-01 TRS = 2.528e-03 
+CJO = 7.237e-10 VJ = 3.379e-01 M = 4.031e-01 ) 
.ENDS Si4830CDYC1
.SUBCKT Si4830CDYC2  D G S 
X1 D G S Si4830CDYC2_mos 
X2 S D Si4830CDYC2_schottky 
.ENDS Si4830CDYC2 
.SUBCKT Si4830CDYC2_mos  D G S 
M1 3 GX S S NMOS W= 1710624u L= 0.25u 
M2 S GX S D PMOS W= 1710624u L= 2.168e-07 
R1 D 3 1.369e-02 4.268e-03 6.076e-06 
CGS GX S 6.496e-10 
CGD GX D 3.510e-11 
RG G GY 1.2
RTCV 100 S 1e6 1.105e-03 -1.112e-06 
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 5e-8 
+ RS = 0 KP = 1.131e-05 NSUB = 2.554e+17 
+ KAPPA = 1e-2 ETA = 1e-4 NFS = 8e11 
+ XJ = 5e-7 LD = 0 IS = 0 TPG = 1) 
*************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 5e-8 
+NSUB = 1.088e+16 IS = 0 TPG = -1 ) 
**************************************************************** 
.ENDS Si4830CDYC2_mos 
.subckt Si4830CDYC2_schottky  7 5 
d1 7 5 sdsm 
d2 7 5 sdlg 
d3 7 4 sdrev 
d4 5 4 sdblk 
.model sdsm d (IS = 1.589e-10 N = 1.305e+00 EG = 1.198e+00 
+XTI = 2.645e+00 RS = 8.848e-03 TRS = 2.598e-03 ) 
.model sdlg d (IS = 7.531e-06 N = 1.154e+00 EG = 6.218e-01 
+XTI = 2.869e-02 RS = 1.046e-01 TRS = 4.737e-03 
+VJ = 3.485e-01 CJO = 7.163e-10 M = 4.036e-01 
+TT = 4.000e-08 ) 
.model sdrev d (IS = 2.249e-06 N = 1.167e+00 EG = 6.996e-01 
+XTI = 1.029e-01 ) 
.model sdblk d (IS = 1e-11 N=1) 
.ends Si4830CDYC2_schottky