*Nov 19, 2012
*ECN S12-2768, Rev. B
*File Name: Si4166DY_PS.txt, Si4166DY_PS.lib
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
.SUBCKT Si4166DY D G S 
M1 3 GX S S NMOS W= 6370507u L= 0.25u 
M2 S GX S D PMOS W= 6370507u L= 2.380e-07 
R1 D 3 2.621e-03 TC=4.111e-03, 1.206e-05 
CGS GX S 1.652e-09 
CGD GX D 2.471e-11 
RG G GY 0.80 
RTCV 100 S 1e6 TC=1.481e-04, -3.634e-07 
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD 
**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 5e-8 
+ RS = 0 KP = 8.453e-06 NSUB = 10.52e+16 
+ KAPPA = 1e-2 ETA = 8.114e-05 NFS = 6.634e+11 
+ XJ = 5.000e-12 LD = 0 IS = 0 TPG = 1) 
*************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 5e-8 
+NSUB = 2.598e+16 IS = 0 TPG = -1 ) 
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 1.500e-08 T_MEASURED = 25 BV = 31 
+RS = 1.444e-03 N = 1.125e+00 IS = 3.299e-11 
+EG = 1.152e+00 XTI = 9.540e-01 TRS1 = 1.000e-05 
+CJO = 1.533e-09 VJ = 9.000e-01 M = 4.968e-01 ) 
.ENDS 
