*Dec 15, 2008 *Doc. ID: 64637, ECN S-82899, Rev. A *File Name: Si5913DC_PS.txt and Si5913DC_PS.lib *This document is intended as a SPICE modeling guideline and does not *constitute a commercial product data sheet. Designers should refer to the *appropriate data sheet of the same number for guaranteed specification *limits. .subckt Si5913DC d g s a k x1 d g s Si5913DC_mos x2 a k Si5913DC_schottky .ends Si5913DC .SUBCKT Si5913DC_mos D G S M1 3 GX S S PMOS W= 584000u L= 0.25u M2 S GX S D NMOS W= 584000u L= 4.333e-07 R1 D 3 2.0e-03 TC=1.097e-02, 7.862e-06 CGS GX S 1.134e-10 CGD GX D 1.229e-11 RG G GY 6 RTCV 100 S 1e6 TC=-1.243e-04, -1.886e-06 ETCV GY GX 100 200 1 ITCV S 100 1u VTCV 200 S 1 DBD D S DBD **************************************************************** .MODEL PMOS PMOS ( LEVEL = 3 TOX = 3e-8 + RS = 5.559e-02 KP = 4.331e-06 NSUB = 6.0e+15 + KAPPA = 0.5e-2 ETA = 1.000e-07 NFS = 1.775e+12 + LD = 0 IS = 0 TPG = -1) *************************************************************** .MODEL NMOS NMOS ( LEVEL = 3 TOX = 3e-8 +NSUB = 3.792e+16 IS = 0 TPG = -1 ) **************************************************************** .MODEL DBD D ( +FC = 0.1 TT = 1.27e-08 T_MEASURED = 25 BV = 21 +RS = 3.483e-02 N = 1.819e+00 IS = 1.000e-07 +EG = 1.103e+00 XTI = 7.029e-01 TRS1 = 1.260e-03 +CJO = 9.172e-11 VJ = 3.058e-01 M = 3.116e-01 ) .ENDS Si5913DC_mos .subckt Si5913DC_schottky 7 5 r1 7 1 7.97e-02 tc=2.32e-02,-1.52e-04 d1 1 5 sdsm r2 7 2 1.05 tc=0.6,1.96e-02 d2 2 5 sdlg .model sdsm d ( +is=1.81e-06 n=9.32e-01 ikf=1 eg=6.23e-01 +xti=2.19e-01 +bv=50 ibv=1e-1 ) .model sdlg d ( +is=1.95e-05 n=1.61 ikf=1 eg=4.9e-01 +xti=10 +bv=50 ibv=1e-1 +vj=0.233 cjo=261e-12 m=0.393) .ends Si5913DC_schottky