*Nov 05, 2012
*ECN S12-2653, Rev. B
*File Name: Si4160DY_PS.txt, Si4160DY_PS.lib
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
.SUBCKT Si4160DY D G S 
M1 3 GX S S NMOS W= 4989209u L= 0.25u 
M2 S GX S D PMOS W= 4989209u L= 2.282e-07 
R1 D 3 3.438e-03 TC=4.766e-03, 9.122e-06 
CGS GX S 1.236e-09 
CGD GX D 7.182e-11 
RG G GY 0.85 
RTCV 100 S 1e6 TC=-2.496e-03, -9.950e-07 
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD 
**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 5e-8 
+ RS = 3.259e-04 KP = 1.867e-05 NSUB = 1.217e+17 
+ KAPPA = 5.363e-01 ETA = 1.000e-07 NFS = 1.420e+12 
+ LD = 0 IS = 0 TPG = 1) 
*************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 5e-8 
+NSUB = 1.384e+16 IS = 0 TPG = -1 ) 
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 9.828e-09 T_MEASURED = 25 BV = 31 
+RS = 2.189e-03 N = 1.073e+00 IS = 1.393e-11 
+EG = 1.167e+00 XTI = 2.000e-01 TRS1 = 3.155e-04 
+CJO = 1.118e-09 VJ = 3.908e-01 M = 3.399e-01 ) 
.ENDS 
