*Apr 13, 2009
*Doc. ID: 64931, S09-0630, Rev. A
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product data sheet.  Designers should refer to the
*appropriate data sheet of the same number for guaranteed specification
*limits.
.SUBCKT Si4622DY D1 G1 S1 D2 G2 S2 
X1 D1 G1 S1 Si4622DYC1
X2 D2 G2 S2 Si4622DYC2
.ENDS Si4622DY
*Channel 1
.SUBCKT Si4622DYC1 D G S 
X1 D G S Si4622DYC1_nmos 
X2 S D   Si4622DYC1_schottky 
.ENDS Si4622DYC1 
.SUBCKT Si4622DYC1_nmos D G S 
M1 3 GX S S NMOS W= 3813238u L= 0.25u 
M2 S GX S D PMOS W= 3813238u L= 2.172e-07 
R1 D 3 7.939e-03 5.753e-03 5.587e-06 
CGS GX S 1.845e-09 
CGD GX D 7.048e-11 
RG G GY 1.3 
RTCV 100 S 1e6 -2.120e-04 -1.991e-06 
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 5e-8 
+ RS = 4.446e-03 KP = 1.098e-05 NSUB = 1.401e+17 
+ KAPPA = 1.000e-06 ETA = 3.083e-04 NFS = 5.148e+11 
+ LD = 0 IS = 0 TPG = 1) 
*************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 5e-8 
+NSUB = 1.605e+16 IS = 0 TPG = -1 ) 
**************************************************************** 
.ENDS Si4622DYC1_nmos
.subckt Si4622DYC1_schottky 7 5 
d1 7 5 sdsm 
d2 7 5 sdlg 
d3 7 4 sdrev 
d4 5 4 sdblk 
.model sdsm d (IS = 2.914e-11 N = 1.235e+00 EG = 1.259e+00 
+XTI = 4.724e+00 RS = 9.351e-03 TRS = 3.305e-03 ) 
.model sdlg d (IS = 8.689e-06 N = 1.104e+00 EG = 6.442e-01 
+XTI = 2.677e-01 RS = 6.678e-02 TRS = 7.840e-03 
+VJ = 4.353e-01 CJO = 1.187e-09 M = 3.802e-01 
+TT = 2.041e-08 ) 
.model sdrev d (IS = 5.571e-06 N = 1.000e+00 EG = 6.900e-01 
+XTI = 4.000e+00 ) 
.model sdblk d (IS = 1e-11 N=1) 
.ends Si4622DYC1_schottky
*Channel 2
.SUBCKT Si4622DYC2 D G S 
M1 3 GX S S NMOS W= 1239969u L= 0.25u 
M2 S GX S D PMOS W= 1239969u L= 1.913e-07 
R1 D 3 1.099e-02 7.725e-03 1.164e-05 
CGS GX S 5.331e-10 
CGD GX D 2.510e-11 
RG G GY 3.1 
RTCV 100 S 1e6 -3.672e-04 -3.314e-06 
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD 
**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 4e-8 
+ RS = 1.004e-02 KP = 2.686e-05 NSUB = 1.20e+17 
+ KAPPA = 1.260e-01 ETA = 1.000e-07 NFS = 6.267e+11 
+ LD = 0 IS = 0 TPG = 1) 
*************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 4e-8 
+NSUB = 1.526e+16 IS = 0 TPG = -1 ) 
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 1.040e-08 TREF = 25 BV = 32 
+RS = 9.716e-03 N = 1.245e+00 IS = 1.986e-10 
+EG = 1.184e+00 XTI = 2.012e-01 TRS = 2.924e-03 
+CJO = 3.330e-10 VJ = 4.454e-01 M = 3.773e-01 ) 
.ENDS Si4622DYC2