*Aug 24, 2009
*Doc. ID: 64992, ECN S09-1566, Rev. A
*File Name: Si4829DY_PS.txt and Si4829DY_PS.lib
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product data sheet.  Designers should refer to the
*appropriate data sheet of the same number for guaranteed specification
*limits.
.subckt  Si4829DY d g s a k
x1 d g s Si4829DY_mos
x2 a k   Si4829DY_schottky
.ends Si4829DY
.SUBCKT Si4829DY_mos D G S
M1 3 GX S S PMOS W= 332000u L= 0.25u 
M2 S GX S D NMOS W= 332000u L= 4.347e-07 
R1 D 3 4.883e-02 TC=8.841e-03 4.029e-06 
CGS GX S 7.971e-11 
CGD GX D 8.775e-12 
RG G GY 2
RTCV 100 S 1e6 TC=-2.007e-04 -1.202e-06 
ETCV GY GX 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD D S DBD 
**************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 3e-8 
+ RS = 8.279e-02 KP = 5.901e-06 NSUB = 5.807e+15 
+ KAPPA = 1e-2 ETA = 1.030e-04 NFS = 8.000e+09 
+ LD = 0 IS = 0 TPG = -1) 
*************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 3e-8 
+NSUB = 4.573e+16 IS = 0 TPG = -1 ) 
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 1.672e-08 T_MEASURED = 25 BV = 21 
+RS = 5.687e-02 N = 1.881e+00 IS = 1.000e-07 
+EG = 1.090e+00 XTI = 1.349e+00 TRS1 = 7.055e-04 
+CJO = 7.599e-11 VJ = 2.032e-01 M = 2.925e-01 ) 
.ENDS Si4829DY_mos
.subckt Si4829DY_schottky 7 5
r1 7 1 5.71e-02 tc=1.33e-02,-1.06e-04
d1 1 5 sdsm
r2 7 2 4.52e-02 tc=1.14e-01,-2.75e-05
d2 2 5 sdlg
.model sdsm d (
+is=3.70e-07 n=6.74e-01 ikf=1 eg=5.76e-01
+xti=2e-01 
+bv=50 ibv=1e-1 )
.model sdlg d (
+is=2.36e-04 n=1.51 ikf=1 eg=2.19e-02
+xti=2.23e+1
+bv=50 ibv=1e-1 
+vj=0.386 cjo=290e-12 m=0.302)
.ends Si4829DY_schottky