*Sep 14, 2009 *Doc. ID: 65412, ECN S09-1807, Rev. A *File Name: Si4914BDY_PS.txt and Si4914BDY_PS.lib *This document is intended as a SPICE modeling guideline and does not *constitute a commercial product data sheet. Designers should refer to the *appropriate data sheet of the same number for guaranteed specification *limits. .SUBCKT Si4914BDY D1 G1 S1_D2 G2 S2 X1 D1 G1 S1_D2 Si4914BDYC1 X2 S1_D2 G2 S2 Si4914BDYC2 XSDC2 S2 S1_D2 Si4914BDYC2_SCHOTTKY .ENDS Si4914BDY *Channel 1 .SUBCKT Si4914BDYC1 D G S M1 3 GX S S NMOS W= 1366633u L= 0.25u M2 S GX S D PMOS W= 1366633u L= 1.230e-07 R1 D 3 1.361e-02 TC=4.833e-03, 7.410e-06 CGS GX S 4.280e-10 CGD GX D 3.262e-11 RG G GY 2.9 RTCV 100 S 1e6 TC=8.458e-04, 6.246e-07 ETCV GX GY 100 200 1 ITCV S 100 1u VTCV 200 S 1 DBD S D DBD **************************************************************** .MODEL NMOS NMOS ( LEVEL = 3 TOX = 3e-8 + RS = 7.112e-04 KP = 1.329e-05 NSUB = 3.368e+17 + KAPPA = 1.000e-06 ETA = 1.584e-06 NFS = 1.145e+12 + LD = 0 IS = 0 TPG = 1) *************************************************************** .MODEL PMOS PMOS ( LEVEL = 3 TOX = 3e-8 +NSUB = 2.560e+16 IS = 0 TPG = -1 ) **************************************************************** .MODEL DBD D ( +FC = 0.1 TT = 3.212e-08 T_MEASURED = 25 BV = 31 +RS = 6.690e-03 N = 1.097e+00 IS = 2.503e-12 +EG = 1.218e+00 XTI = 1.562e+00 TRS1 = 3.355e-03 +CJO = 3.926e-10 VJ = 4.219e-01 M = 3.666e-01 ) .ENDS Si4914BDYC1 *Channel 2 .SUBCKT Si4914BDYC2 D G S X1 D G S Si4914BDYC2_MOS X2 S D Si4914BDYC2_SCHOTTKY .ENDS Si4914BDYC2 .SUBCKT Si4914BDYC2_MOS D G S M1 3 GX S S NMOS W= 1710624u L= 0.25u M2 S GX S D PMOS W= 1710624u L= 1.179e-07 R1 D 3 1.279e-02 TC=4.579e-03, 5.053e-06 CGS GX S 5.260e-10 CGD GX D 3.883e-11 RG G GY 2 RTCV 100 S 1e6 TC=6.009e-04, -4.553e-06 ETCV GX GY 100 200 1 ITCV S 100 1u VTCV 200 S 1 **************************************************************** .MODEL NMOS NMOS ( LEVEL = 3 TOX = 3e-8 + RS = 2.658e-04 KP = 8.870e-06 NSUB = 3.403e+17 + KAPPA = 1.000e-06 ETA = 7.278e-07 NFS = 1.203e+12 + LD = 0 IS = 0 TPG = 1) *************************************************************** .MODEL PMOS PMOS ( LEVEL = 3 TOX = 3e-8 +NSUB = 2.249e+16 IS = 0 TPG = -1 ) **************************************************************** .ENDS Si4914BDYC2_MOS .subckt Si4914BDYC2_SCHOTTKY 7 5 d1 7 5 sdsm d2 7 5 sdlg d3 7 4 sdrev d4 5 4 sdblk .model sdsm d (IS = 1.327e-12 N = 1.100e+00 EG = 1.148e+00 +XTI = 5.681e+00 RS = 8.959e-03 TRS1= 3.163e-03 ) .model sdlg d (IS = 6.376e-06 N = 1.115e+00 EG = 6.395e-01 +XTI = 2.092e-03 RS = 1.105e-01 TRS1 = 6.300e-03 +VJ = 3.092e-01 CJO = 7.511e-10 M = 3.988e-01 +TT = 1.121e-08 ) .model sdrev d (IS = 9.824e-06 N = 1.708e+00 EG = 6.056e-01 +XTI = 9.361e+00 ) .model sdblk d (IS = 1e-11 N=1) .ends Si4914BDYC2_SCHOTTKY