*Apr 01, 2013
*ECN S13-0699, Rev. B
*File Name: SiB455EDK_PS.txt, SiB455EDK_PS.lib
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
.SUBCKT SiB455EDK D G S 
x1  D G S SiB455EDK_mos
x2  G S     SiB455EDK_esd
.ENDS  SiB455EDK
.SUBCKT SiB455EDK_mos D G S 
M1 3 GX S S PMOS W= 1035000u L= 0.25u 
M2 S GX S D NMOS W= 1035000u L= 2.587e-07 
R1 D 3 1.000e-04 TC=9.043e-02 4.219e-05 
CGS GX S 2.617e-10 
CGD GX D 2.199e-11 
RG G GY 1.4 
RTCV 100 S 1e6 TC=-5.378e-05 2.279e-06 
ETCV GY GX 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD D S DBD 
**************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 2e-8 
+ RS = 1.899e-02 KP = 1.079e-05 NSUB = 1.730e+15 
+ KAPPA = 1.883e-03 ETA = 5.000e-04 NFS = 2.102e+12 
+ LD = 0 IS = 0 TPG = -1) 
*************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 2e-8 
+NSUB = 7.260e+16 IS = 0 TPG = -1 ) 
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 2.000e-07 T_MEASURED = 25 BV = 13 
+RS = 2.570e-02 N = 1.429e+00 IS = 1.000e-07 
+EG = 7.974e-01 XTI = 2.866e+00 TRS1 = 1.000e-05 
+CJO = 2.054e-11 VJ = 4.136e-01 M = 1.000e+00 ) 
.ENDS SiB455EDK_mos
.subckt SiB455EDK_esd 1 2 
r1 1 9 1.667e+05 TC= -4.000e-02 
d1 2 9 dleak 1 
.MODEL dleak d (IS = 1.842e-09 XTI = 5.168e+02 EG = 1.17 
+ T_MEASURED = 25 TBV1 = 0 N = 5.106e+01 BV = 50) 
r2 1 10 1.070e+02 TC= 6.498e-05 
d3 11 10 dout 1 
d4 11 2 dout  1 
.MODEL dout D (IS = 6.067e-11 XTI = -2.872e+01 EG = 1.17 
+ T_MEASURED = 25 TBV1 = -3.841e-04 N = 5.000e-01 BV = 1.280e+01 ) 
.ends SiB455EDK_esd
