*Mar 15, 2010 *Doc. ID: 65966, ECN S10-0590, Rev. A *This document is intended as a SPICE modeling guideline and does not *constitute a commercial product data sheet. Designers should refer to the *appropriate data sheet of the same number for guaranteed specification *limits. .SUBCKT SiA533EDJ D1 G1 S1 D2 G2 S2 X1 D1 G1 S1 SiA533EDJN X2 D2 G2 S2 SiA533EDJP .ENDS SiA533EDJ *N-CH .SUBCKT SiA533EDJN D G S x1 D G S SiA533EDJN_mos x2 G S SiA533EDJN_esd .ENDS SiA533EDJN .SUBCKT SiA533EDJN_mos D G S M1 3 GX S S NMOS W= 434656u L= 0.25u M2 S GX S D PMOS W= 434656u L= 2.782e-07 R1 D 3 1.116e-02 9.182e-03 1.452e-05 CGS GX S 2.745e-10 CGD GX D 2.890e-11 RG G GY 3.5 RTCV 100 S 1e6 -7.086e-05 -1.057e-06 ETCV GX GY 100 200 1 ITCV S 100 1u VTCV 200 S 1 DBD S D DBD **************************************************************** .MODEL NMOS NMOS ( LEVEL = 3 TOX = 1.7e-8 + RS = 1.544e-02 KP = 7.858e-05 NSUB = 1.505e+17 + KAPPA = 3.207e-01 ETA = 1.000e-07 NFS = 1.345e+12 + LD = 0 IS = 0 TPG = 1) *************************************************************** .MODEL PMOS PMOS ( LEVEL = 3 TOX = 1.7e-8 +NSUB = 4.738e+16 IS = 0 TPG = -1 ) **************************************************************** .MODEL DBD D ( +FC = 0.1 TT = 8.772e-09 TREF = 25 BV = 14 +RS = 6.838e-02 N = 7.941e+00 IS = 3.966e-10 +EG = 1.250e+00 XTI = 2.000e+00 TRS = 1.000e-03 +CJO = 1.479e-10 VJ = 3.000e-01 M = 2.511e-01 ) .ENDS SiA533EDJN_mos .subckt SiA533EDJN_esd 1 2 r1 1 9 9.422e+06 TC= -7.063e-03 d1 9 2 dleak M=1 .MODEL dleak d (IS = 4.652e-10 XTI = 5.768e+02 EG = 1.17 + TREF = 25 TCV = 0 N = 4.541e+01 BV = 50) r2 1 10 2.712e+02 TC= -4.115e-03 d3 11 10 dout M= 0.514 d4 11 12 dout M= 0.514 d5 13 12 dout M= 0.575 d6 13 2 dout M= 0.575 .MODEL dout D (IS = 1.763e-10 XTI = 1.433e+01 EG = 1.17 + TREF = 25 TCV = -3.285e-03 N = 2.898e+00 BV = 6.560e+00 .ends SiA533EDJN_esd *P-CH .SUBCKT SiA533EDJP D G S x1 D G S SiA533EDJP_mos x2 G S SiA533EDJP_esd .ENDS SiA533EDJP .SUBCKT SiA533EDJP_mos D G S M1 3 GX S S PMOS W= 646000u L= 0.25u M2 S GX S D NMOS W= 646000u L= 4.893e-07 R1 D 3 8.781e-03 9.920e-03 1.349e-05 CGS GX S 2.249e-11 CGD GX D 8.215e-12 RG G GY 7 RTCV 100 S 1e6 1.125e-04 -2.617e-06 ETCV GY GX 100 200 1 ITCV S 100 1u VTCV 200 S 1 DBD D S DBD **************************************************************** .MODEL PMOS PMOS ( LEVEL = 3 TOX = 1.7e-8 + RS = 2.698e-02 KP = 8.526e-06 NSUB = 4.798e+14 + KAPPA = 1.843e-04 ETA = 1.203e-05 NFS = 6.813e+11 + LD = 0 IS = 0 TPG = -1) *************************************************************** .MODEL NMOS NMOS ( LEVEL = 3 TOX = 1.7e-8 +NSUB = 2.125e+17 IS = 0 TPG = -1 ) **************************************************************** .MODEL DBD D ( +FC = 0.1 TT = 7.895e-09 TREF = 25 BV = 14 +RS = 2.185e-02 N = 1.730e+00 IS = 9.884e-08 +EG = 1.002e+00 XTI = 3.626e-01 TRS = 1.000e-05 +CJO = 9.087e-11 VJ = 9.000e-01 M = 4.893e-01 ) .ENDS SiA533EDJP_mos .subckt SiA533EDJP_esd 2 1 r1 1 9 0.132e+06 TC= -1.060e-03 d1 9 2 dleak .MODEL dleak d (IS = 1.552e-9 XTI = 3.640e+02 EG = 1.17 + TREF = 25 TCV = 0 N = 3.803e+01 BV = 50) r2 1 10 2.761e+00 TC= -5.734e-03 d3 11 10 dout d4 11 2 dout .MODEL dout D (IS = 1.006e-12 XTI = 2.477e+00 EG = 1.17 + TREF = 25 TCV = 1.339e-02 N = 7.019e+00 BV = 8.546e+00 ) .ends SiA533EDJP_esd