*Nov 05, 2012
*ECN S152-2641, Rev. B
*File Name: Si4666DY_PS.txt and Si4666DY_PS.lib
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
.SUBCKT  Si4666DY D G S 
M1 3 GX S S NMOS W= 1991950u L= 0.25u 
M2 S GX S D PMOS W= 1991950u L= 3.932e-07 
R1 D 3 6.827e-03 TC=4.617e-03 8.468e-06 
CGS GX S 8.371e-10 
CGD GX D 2.356e-11 
RG G GY 0.6 
RTCV 100 S 1e6 TC=-8.905e-05 -7.009e-07 
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD 
**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 5e-8 
+ RS = 6.651e-04 KP = 2.155e-05 NSUB = 3.394e+16 
+ KAPPA = 1.000e-06 ETA = 5.949e-07 NFS = 4.098e+11 
+ LD = 0 IS = 0 TPG = 1) 
*************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 5e-8 
+NSUB = 1.519e+16 IS = 0 TPG = -1 ) 
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 7.238e-09 T_MEASURED = 25 BV = 26 
+RS = 1.034e-02 N = 1.015e+00 IS = 9.509e-11 
+EG = 8.714e-01 XTI = 2.937e+00 TRS1 = 1.000e-05 
+CJO = 4.801e-10 VJ = 6.322e-01 M = 3.984e-01 ) 
.ENDS 
