********************************
* Copyright:                   *
* Vishay Intertechnology, Inc. *
********************************
*Oct 19, 2015
*ECN S15-2497, Rev. A
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
.SUBCKT Si5411EDU D G S 
x1  D G S Si5411EDU_mos
x2  G S   Si5411EDU_esd
.ENDS Si5411EDU
.SUBCKT Si5411EDU_mos D G S 
M1 3 GX S S PMOS W= 4142500u L= 0.30u 
M2 S GX S D NMOS W= 4142500u L= 0.44u 
R1 D 3 1.889e-03 1.129e-03 -5.154e-06 
CGS GX S 10.145e-10 
CGD GX D 1.000e-13 
RG G GY 1m 
RTCV 100 S 1e6 4.751e-04 0.383e-06 
ETCV GY GX 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD D S DBD 4142500u 
********************************************************* 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 2e-8 
+ RS = 0 KP = 5.020e-06 NSUB = 3.632e+13 
+ KAPPA = 1.023e-06 NFS = 9.901e+11 
+ LD = 0 IS = 0 TPG = -1 CAPOP = 12 ) 
*********************************************************  
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 2e-8 
+NSUB = 1.893e+17 IS = 0 TPG = -1 CAPOP = 12 ) 
********************************************************* 
.MODEL DBD D ( 
+FC = 0.1 TT = 5.785e-08 TREF = 25 BV = 12.5 
+RS = 9.523e-03 N = 2.161e+00 IS = 60.803e-07 
+EG = 5.896e-01 XTI = 1.20e+01 TRS = -7.000e-04 
+CJO = 2.000e-11 VJ = 3.000e-01 M = 9.983e-01 )
.ENDS  Si5411EDU_mos
.subckt Si5411EDU_esd 1 2 
r1 1 9 1.000e+05 -0.276e-3 
d1 2 9 dleak 
.MODEL dleak d (IS = 5.08e-10 XTI = 5.416e+02 EG = 1.17 
+ TREF = 25 TCV = 0 N = 5.515e+01 BV = 50) 
r2 1 10 0.7e+01 -1.925e-03 
d3 11 10 dout 
d4 11 2 dout 
.MODEL dout D (IS = 1.526e-08 XTI = -2.9e+01 EG = 1.17 
+ TREF = 25 TCV = 3.928e-04 N = 5.220e+00 BV = 1.305e+01 
+ TLEV = 1) 
.ends Si5411EDU_esd 
