*Dec 20, 2010
*Doc. ID: 67262, ECN S10-2885, Rev. A
*File Name: Si4909DY_PS.txt and Si4909DY_PS.lib
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate data sheet of the same number for guaranteed specification
*limits.
.SUBCKT Si4909DY D G S 
M1 3 GX S S PMOS W= 5460000u L= 0.25u 
M2 S GX S D NMOS W= 5460000u L= 3.863e-07 
R1 D 3 5.596e-03 TC=5.000e-01 5.000e-04 
CGS GX S 9.011e-10 
CGD GX D 2.738e-11 
RG G GY 6 
RTCV 100 S 1e6 TC=1.233e-3 5.996e-07 
ETCV GY GX 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD D S DBD 
**************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 5e-8 
+ RS = 1.375e-02 KP = 2.958e-06 NSUB = 2.57e+16 
+ KAPPA = 7.634e-05 ETA = 2.882e-07 NFS = 8.159e+11 
+ LD = 0 IS = 0 TPG = -1) 
*************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 5e-8 
+NSUB = 1.627e+16 IS = 0 TPG = -1 ) 
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 2.000e-08 T_MEASURED = 25 BV = 42 
+RS = 7.823e-3 N = 1.064 IS = 6.143e-12 
+EG = 1.25 XTI = 1.003e-02 TRS1 = 3.228e-3 
+CJO = 2.761e-10 VJ = 4.000e-01 M = 3.379e-01 ) 
.ENDS