********************************
* Copyright:                   *
* Vishay Intertechnology, Inc. *
********************************
*Mar 07, 2016
*ECN S16-0368, Rev. A
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
.SUBCKT SiSS10DN D G S 
M1 3 GX S S NMOS W= 6920000u L= 0.30u 
M2 S GX S D PMOS W= 6920000u L= 0.15u
R1 D 3 1.8594e-03 4.469e-03 1.6934e-05 
CGS GX S 2.490e-09 
CGD GX D 1.000e-13 
RG G GY 1m 
RTCV 100 S 1e6 .345e-04 -3.393e-07 
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD 6920000u 
**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 5e-8 
+ RS = 0 KP = 1.5664e-05 NSUB = 9.580e+16 
+ KAPPA = 1.0834e-02 NFS = 1.0050e+11 
+ LD = 0 IS = 0 TPG = 1 CAPOP = 12 ) 
*************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 5e-8 
+NSUB = 1.502e+16 IS = 0 TPG = -1 CAPOP = 12 ) 
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 4.433e-08 TREF = 25 BV = 41 
+RS = 9.254e-03 N = 1.103e+00 IS = 2.737e-12 
+EG = 1.176e+00 XTI = 3.546e-01 TRS = 4.589e-04 
+CJO = 2.906e-10 VJ = 7.205e+00 M = 9.990e-01 ) 
.ENDS 
