*Apr 22, 2013
*ECN S13-0826, Rev. B
*File Name: SiR316DP_PS.txt and SiR316DP_PS.lib
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
.SUBCKT SiR316DP D G S 
M1 3 GX S S NMOS W= 2327942u L= 0.25u 
M2 S GX S D PMOS W= 2327942u L= 2.082e-07 
R1 D 3 2.000e-03 TC=2.306e-01 3.837e-04 
CGS GX S 4.747e-10 
CGD GX D 3.469e-11 
RG G GY 0.90 
RTCV 100 S 1e6 TC=-2.931e-04 6.676e-07 
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD 
**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 5e-8 
+ RS = 2.665e-03 KP = 2.168e-05 NSUB = 1.276e+17 
+ KAPPA = 1.092e-01 ETA = 2.560e-04 NFS = 8.621e+11 
+ LD = 0 IS = 0 TPG = 1) 
*************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 5e-8 
+NSUB = 9.227e+15 IS = 0 TPG = -1 ) 
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 1.000e-08 T_MEASURED = 25 BV = 26 
+RS = 1.377e-03 N = 1.038e+00 IS = 4.402e-12 
+EG = 1.157e+00 XTI = 9.370e-01 TRS1 = 3.256e-03 
+CJO = 9.142e-10 VJ = 4.797e-01 M = 3.937e-01 ) 
.ENDS 
