*Mar 14, 2011
*Doc. ID: 67701, ECN S11-0411, Rev. A
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
.SUBCKT Si7792DP D G S 
X1 D G S Si7792DP_nmos 
X2 S D Si7792DP_schottky 
.ENDS Si7792DP 
.SUBCKT Si7792DP_nmos D G S 
M1 3 GX S S NMOS W= 12229028u L= 0.25u 
M2 S GX S D PMOS W= 12229028u L= 2.500e-07 
R1 D 3 4.352e-04 7.369e-02 1.017e-04 
CGS GX S 2.632e-09 
CGD GX D 1.000e-11 
RG G GY 0.90 
RTCV 100 S 1e6 4.914e-06 -1.018e-06 
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 5e-8 
+ RS = 1.136e-03 KP = 1.810e-05 NSUB = 7.398e+16 
+ KAPPA = 4.697e-04 ETA = 1.000e-07 NFS = 5.687e+11 
+ LD = 0 IS = 0 TPG = 1) 
*************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 5e-8 
+NSUB = 3.000e+16 IS = 0 TPG = -1 ) 
**************************************************************** 
.ENDS Si7792DP_nmos
.subckt Si7792DP_schottky  7 5 
d1 7 5 sdsm 
d2 7 5 sdlg 
d3 7 4 sdrev 
d4 5 4 sdblk 
.model sdsm d (IS = 3.992e-10 N = 6.362e-01 EG = 8.000e-01 
+XTI = 0. RS = 1.000e-02 TRS = 1.000e-02 ) 
.model sdlg d (IS = 1.699e-05 N = 1.015e+00 EG = 5.183e-01 
+XTI = 1.588e-01 RS = 2.007e-02 TRS = 1.000e-02 
+VJ = 9.000e-01 CJO = 2.000e-09 M = 3.990e-01 
+TT = 4.964e-09 ) 
.model sdrev d (IS = 1e-7 N = 1.000e-00 EG = 6.900e-01 
+XTI = 4.000e+00 ) 
.model sdblk d (IS = 1e-11 N=1) 
.ends Si7792DP_schottky