********************************
* Copyright:                   *
* Vishay Intertechnology, Inc. *
********************************
*Oct 03, 2016
*ECN S16-1914, Rev. A
*File Name: SiR616DP_PS.txt and SiR616DP_PS.lib
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
.SUBCKT SiR616DP D G S 
M1 3 GX S S NMOS W= 3190590u L= 0.30u 
M2 S GX S D PMOS W= 3190590u L= 0.27u 
R1 D 3 3.776e-02 TC=8.257e-03,2.678e-05
CGS GX S 1.009e-09 
CGD GX D 1.008e-13 
RG G GY 1m 
RTCV 100 S 1e6 TC=1.964e-03,-0.562e-05
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD 3190590u 
**************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 7e-8 
+ RS = 0 KP = 4.020e-06 NSUB = 1.189e+17 
+ KAPPA = 1.137e-02 NFS = 3.020e+11 
+ LD = 0 IS = 0 TPG = 1    )
*************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 7e-8 
+NSUB = 9.258e+15 IS = 0 TPG = -1    )
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 2.800e-07 T_measured = 25 BV = 201
+RS = 1.216e-02 N = 1.146e+00 IS = 4.616e-12 
+EG = 1.240e+00 XTI = 6.338e-01 TRS1 = 3.365e-03
+CJO = 8.494e-10 VJ = 3.551e+00 M = 1.000e+00 ) 
.ENDS 
