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* Copyright:                   *
* Vishay Intertechnology, Inc. *
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*Dec 28, 2015
*ECN S15-3026, Rev. A
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
.SUBCKT SiS626DN D G S 
M1 3 GX S S NMOS W= 3062590u L= 0.30u 
M2 S GX S D PMOS W= 3062590u L= 0.21u 
R1 D 3 6.955e-03 3.835e-03 5.101e-06 
CGS GX S 1.251e-09 
CGD GX D 9.310e-11 
RG G GY 1m 
RTCV 100 S 1e6 1.029e-04 -8.575e-08 
ETCV GX GY 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD S D DBD 3062590u 
**************************************************  
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 3e-8 
+ RS = 0 KP = 3.21e-05 NSUB = 1.01e+17 
+ KAPPA = 3.510e-04 NFS = 1.011e+11 
+ LD = 0 IS = 0 TPG = 1 CAPOP = 12 ) 
**************************************************  
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 3e-8 
+NSUB = 1.069e+16 IS = 0 TPG = -1 CAPOP = 12 ) 
**************************************************  
.MODEL DBD D ( 
+FC = 0.1 TT = 2.380e-08 TREF = 25 BV = 26 
+RS = 2.426e-02 N = 1.087e+00 IS = 6.335e-11 
+EG = 7.158e-01 XTI = 9.989e+00 TRS = 1.000e-05 
+CJO = 2.635e-10 VJ = 7.784e-01 M = 5.135e-01 ) 
.ENDS 
