*January 21, 2008 *Doc. ID: 69712, S-80015, Rev. A *File Name: Si3879DV_PS.txt and Si3879DV_PS.lib *This document is intended as a SPICE modeling guideline and does not *constitute a commercial product data sheet. Designers should refer to the *appropriate data sheet of the same number for guaranteed specification *limits. .subckt Si3879DV d g s a x1 d g s Si3879DV_mos x2 a d Si3879DV_schottky .ends Si3879DV .SUBCKT Si3879DV_mos D G S M1 3 GX S S PMOS W=547478u L=0.25u M2 S GX S D NMOS W=547478u L=0.30u RG G GX 7.5 R1 D 3 RTEMP 23E-3 CGS GX S 326E-12 DBD D S DBD *************************************************************** .MODEL PMOS PMOS ( LEVEL = 3 TOX = 3E-8 + RS = 15E-3 RD = 0 NSUB = 5.5E16 + KP = 9.5E-6 UO = 400 + VMAX = 0 XJ = 5E-7 KAPPA = 8E-3 + ETA = 1E-4 TPG = -1 + IS = 0 LD = 0 + CGSO = 0 CGDO = 0 CGBO = 0 + NFS = 0.8E12 DELTA = 0.1) *************************************************************** .MODEL NMOS NMOS ( LEVEL = 3 TOX = 3E-8 +NSUB = 8E16 IS = 0 TPG = -1) *************************************************************** .MODEL DBD D (CJO=215E-12 VJ=0.38 M=0.26 +FC=0.5 TT=9.07E-9 T_MEASURED=25 BV=22 +RS=1.868e-02 N=1.153 IS=2.615e-11 IKF=1000 +EG=1.201 XTI=2.330e-01 TRS1=1.825e-03) *************************************************************** .MODEL RTEMP RES (TC1=7E-3 TC2=5.5E-6) *************************************************************** .ENDS Si3879DV_mos .subckt Si3879DV_schottky 7 5 r1 7 1 7.97e-02 tc=2.32e-02,-1.52e-04 d1 1 5 sdsm r2 7 2 1.05 tc=0.6,1.96e-02 d2 2 5 sdlg .model sdsm d ( +is=1.81e-06 n=9.32e-01 ikf=1 eg=6.23e-01 +xti=2.19e-01 +bv=50 ibv=1e-1 ) .model sdlg d ( +is=1.95e-05 n=1.61 ikf=1 eg=4.9e-01 +xti=10 +bv=50 ibv=1e-1 +vj=0.233 cjo=261e-12 m=0.393) .ends Si3879DV_schottky