*May 14, 2007
*Doc. ID: 74780, S-70954, Rev. A
*File Name: Si5519DU_PS.txt and Si5519DU_PS.lib
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product data sheet.  Designers should refer to the
*appropriate data sheet of the same number for guaranteed specification
*limits.
.SUBCKT Si5519DU D1 G1 S1 D2 G2 S2 
X1 D1 G1 S1 Si5519N
X2 D2 G2 S2 Si5519P
.ENDS Si5519DU
*N-CH
.SUBCKT Si5519N D G S
M1  3  GX S S NMOS W=693663u L=0.25u   
M2  S  GX S D PMOS W=693663u L=0.30u   
RG  G  GX     5.2
R1  D  3      RTEMP 6E-3
CGS GX S      500E-12
DBD S  D      DBD
**************************************************************** 
.MODEL  NMOS        NMOS ( LEVEL  = 3           TOX    = 3E-8
+ RS     = 10E-3           RD     = 0           NSUB   = 2.9E17   
+ kp     = 1.3E-5          UO     = 650             
+ VMAX   = 0               XJ     = 5E-7        KAPPA  = 4E-2
+ ETA    = 1E-4            TPG    = 1  
+ IS     = 0               LD     = 0                             
+ CGSO   = 0               CGDO   = 0           CGBO   = 0 
+ NFS    = 0.8E12          DELTA  = 0.1)
**************************************************************** 
.MODEL  PMOS        PMOS ( LEVEL  = 3           TOX    = 3E-8
+NSUB    = 8E16            IS     = 0           TPG    = -1)   
**************************************************************** 
.MODEL DBD D (CJO=85E-12 VJ=0.38 M=0.13  
+FC=0.5 TT=1.14e-08 T_MEASURED=25 BV=21 
+RS=1.627e-02 N=1.198 IS=9.936e-11 IKF=1000
+EG=1.052 XTI=3.153e-01 TRS1=9.009e-12 )
**************************************************************** 
.MODEL RTEMP RES (TC1=10E-3 TC2=5.5E-6)
****************************************************************  
.ENDS Si5519N
*P-CH
.SUBCKT Si5519P D G S
M1  3  GX S S PMOS W=650894u L=0.25u            
M2  S  GX S D NMOS W=650894u L=0.30u
RG  G  GX     9.8
R1  D  3      RTEMP 12E-3
CGS GX S      360E-12
DBD D  S      DBD
***************************************************************  
.MODEL  PMOS        PMOS ( LEVEL  = 3          TOX    = 3E-8
+ RS     = 13.5E-3         RD     = 0          NSUB   = 2E16
+ KP     = 6.2E-6          UO     = 400             
+ VMAX   = 0               XJ     = 5E-7       KAPPA  = 1E-4
+ ETA    = 1E-4            TPG    = -1  
+ IS     = 0               LD     = 0                        
+ CGSO   = 0               CGDO   = 0          CGBO   = 0 
+ NFS    = 0.8E12          DELTA  = 0.1)
*************************************************************** 
.MODEL  NMOS        NMOS ( LEVEL  = 3          TOX    = 3E-8
+NSUB    = 4E17            IS     = 0          TPG    = -1)   
*************************************************************** 
.MODEL DBD D (CJO=90E-12 VJ=0.38 M=0.27
+FC=0.5 TT=7.37e-09 T_MEASURED=25 BV=21
+RS=1.925e-02 N=1.192 IS=1.209e-10 IKF=1000
+EG=1.099 XTI=8.062e-01 TRS1=2.336e-11)
*************************************************************** 
.MODEL RTEMP RES (TC1=8E-3 TC2=5.5E-6)
*************************************************************** 
.ENDS Si5519P