*Jan 2, 2006 *Doc. ID: 75019, S-52634, Rev. C *Dn Gn Sn Dp Gp Sp .SUBCKT Si3552DV 6 2 1 3 5 4 X1 6 2 1 Si3552N X2 3 5 4 Si3552P .ENDS Si3552DV *N-Ch .SUBCKT Si3552N 4 1 2 M1 3 1 2 2 NMOS W=137500u L=0.50u M2 2 1 2 4 PMOS W=137500u L=0.90u R1 4 3 RTEMP 500E-4 CGS 1 2 158E-12 DBD 2 4 DBD ************************************************************** .MODEL NMOS NMOS (LEVEL = 3 TOX = 5E-8 + RS = 250E-4 RD = 0 NSUB = 1.65E17 + KP = 3.25E-5 UO = 650 + VMAX = 0 XJ = 5E-7 KAPPA = 60E-3 + ETA = 1E-4 TPG = 1 + IS = 0 LD = 0 + CGSO = 0 CGDO = 0 CGBO = 0 + TLEV = 1 BEX = -1.5 TCV = 4E-3 + NFS = 0.8E12 DELTA = 0.1) ************************************************************** .MODEL PMOS PMOS (LEVEL = 3 TOX = 5E-8 +NSUB = 4.3E16 TPG = -1) ************************************************************** .MODEL DBD D (CJO=85E-12 VJ=0.38 M=0.32 +RS=0.5 FC=0.5 IS=1E-12 TT=5E-8 N=1 BV=31) ************************************************************** .MODEL RTEMP R (TC1=6.7E-3 TC2=5.5E-6) ************************************************************** .ENDS Si3552N *P-Ch .SUBCKT Si3552P 4 1 2 M1 3 1 2 2 PMOS W=137500u L=0.50u M2 2 1 2 4 NMOS W=137500u L=1.94u R1 4 3 RTEMP 55E-3 CGS 1 2 145E-12 DBD 4 2 DBD ***************************************************************** .MODEL PMOS PMOS ( LEVEL = 3 TOX = 5E-8 + RS = 89E-3 RD = 0 NSUB = 0.7E17 + kp = 1.5E-5 UO = 400 + VMAX = 0 XJ = 5E-7 KAPPA = 10E-2 + ETA = 1E-4 TPG = -1 + IS = 0 LD = 0 + CGSO = 0 CGDO = 0 CGBO = 0 + TLEV = 1 BEX = -1.5 TCV = 3.9E-3 + NFS = 0.8E12 DELTA = 0.1) ***************************************************************** .MODEL NMOS NMOS ( LEVEL = 3 TOX = 5E-8 +NSUB = 15E15 TPG = 1) ***************************************************************** .MODEL DBD D (CJO=85E-12 VJ=0.38 M=0.34 +RS=5 FC=0.5 IS=1E-12 TT=5E-8 N=1 BV=35) ***************************************************************** .MODEL RTEMP R (TC1=10E-3 TC2=5.5E-6) ***************************************************************** .ENDS Si3552P