*Feb. 28, 2005 *Doc. ID: 75185, S-50232, Rev. B .SUBCKT Si1902DL 4 1 2 M1 3 1 2 2 NMOS W=26939u L=0.5u M2 2 1 2 4 PMOS W=26939u L=1.5u R1 4 3 RTEMP 1300E-4 CGS 1 2 40E-12 DBD 2 4 DBD ************************************************************** .MODEL NMOS NMOS (LEVEL = 3 TOX = 3E-8 + RS = 830E-4 RD = 0 NSUB = 1.3E17 + KP = 5E-5 UO = 650 + VMAX = 0 XJ = 5E-7 KAPPA = 200E-3 + ETA = 1E-4 TPG = 1 + IS = 0 LD = 0 + CGSO = 0 CGDO = 0 CGBO = 0 + TLEV = 1 BEX = -1.5 TCV = 2.55E-3 + NFS = 0.8E12 DELTA = 0.1) ************************************************************** .MODEL PMOS PMOS (LEVEL = 3 TOX = 3E-8 +NSUB = 4.5E16 TPG = -1) ************************************************************** .MODEL DBD D (CJO=30E-12 VJ=0.38 M=0.3 +RS=2.5 FC=0.5 IS=1E-8 TT=14E-8 N=1 BV=21) ************************************************************** .MODEL RTEMP R (TC1=7.5E-3 TC2=5.5E-6) ************************************************************** .ENDS