*Feb. 28, 2005
*Doc. ID: 75221, S-50232, Rev. B
.SUBCKT Si2305DS 4 1 2
M1  3 1 2 2 PMOS W=382620u L=0.50u 
M2  2 1 2 4 NMOS W=382620u L=0.90u  
R1  4 3     RTEMP 190E-4
CGS 1 2     640E-12
DBD 4 2     DBD
**************************************************************************
.MODEL  PMOS       PMOS (  LEVEL  = 3               TOX    = 1.7E-8
+ RS     = 100E-4          RD     = 0               NSUB   = 0.38E16   
+ kp     = 2.5E-5          UO     = 400             
+ VMAX   = 0               XJ     = 0.5E-6          KAPPA  = 3E-3
+ ETA    = 1E-4            TPG    = -1  
+ IS     = 0               LD     = 0                            
+ CGSO   = 0               CGDO   = 0               CGBO   = 0 
+ TLEV   = 1               BEX    = -1.5            TCV    = 1.95E-3
+ NFS    = 0.8E12          DELTA  = 0.1)
*************************************************************************
.MODEL  NMOS       NMOS (  LEVEL  = 3               TOX    = 1.7E-8
+NSUB    = 18E16           NFS    =  10E11          TPG    = -1)   
*************************************************************************
.MODEL DBD D (CJO=380E-12 VJ=0.38    M=0.34
+RS=0.1 FC=0.5 IS=1E-12 TT=10E-8 N=1 BV=30)
*************************************************************************
.MODEL RTEMP R (TC1=3.5E-3   TC2=5.5E-6)
*************************************************************************
.ENDS