*May 16, 2005 *Doc. ID: 75806, S-50836, Rev. B *Dn Gn Sn Dp Gp Sp .SUBCKT Si3585DV 6 2 1 3 5 4 X1 6 2 1 Si3585N X2 3 5 4 Si3585P .ENDS Si3585DV *N-Ch .SUBCKT Si3585N 4 1 2 M1 3 1 2 2 NMOS W=167363u L=0.50u M2 2 1 2 4 PMOS W=167363u L=0.65u R1 4 3 RTEMP 45E-3 CGS 1 2 120E-12 DBD 2 4 DBD ************************************************************ .MODEL NMOS NMOS (LEVEL = 3 TOX = 3E-8 + RS = 52E-3 RD = 0 NSUB = 1.7E17 + KP = 5.5E-5 UO = 650 + VMAX = 0 XJ = 5E-7 KAPPA = 35E-2 + ETA = 1E-4 TPG = 1 + IS = 0 LD = 0 + CGSO = 0 CGDO = 0 CGBO = 0 + TLEV = 1 BEX = -1.5 TCV = 2.2E-3 + NFS = 0.8E12 DELTA = 0.1) ************************************************************ .MODEL PMOS PMOS (LEVEL = 3 TOX = 3E-8 +NSUB = 2E16 TPG = -1) ************************************************************ .MODEL DBD D (CJO=110E-12 VJ=0.38 M=0.32 +RS=0.2 FC=0.1 IS=1E-12 TT=5.8E-8 N=1 BV=20.2) ************************************************************ .MODEL RTEMP R (TC1=6E-3 TC2=5.5E-6) ************************************************************ .ENDS Si3585N *P-Ch .SUBCKT Si3585P 4 1 2 M1 3 1 2 2 PMOS W=828290u L=0.25u M2 2 1 2 4 NMOS W=828290u L=0.40u R1 4 3 RTEMP 10E-3 CGS 1 2 45E-12 DBD 4 2 DBD ************************************************************************** .MODEL PMOS PMOS ( LEVEL = 3 TOX = 3E-8 + RS = 130E-3 RD = 0 NSUB = 3.6E16 + KP = 2.6E-6 UO = 400 + VMAX = 0 XJ = 5E-7 KAPPA = 1E-2 + ETA = 1E-4 TPG = -1 + IS = 0 LD = 0 + CGSO = 0 CGDO = 0 CGBO = 0 + TLEV = 1 BEX = -1.5 TCV = 2.5E-3 + NFS = 0.8E12 DELTA = 0.1) ************************************************************************* .MODEL NMOS NMOS ( LEVEL = 3 TOX = 6E-8 +NSUB = 7E15 NFS = 10E11 TPG = -1) ************************************************************************* .MODEL DBD D (CJO=90E-12 VJ=0.38 M=0.28 +RS=0.1 FC=0.5 IS=1E-12 TT=5E-8 N=1 BV=22) ************************************************************************* .MODEL RTEMP R (TC1=8E-3 TC2=5.5E-6) ************************************************************************* .ENDS Si3585P