*May 16, 2005
*Doc. ID: 75950, S-50836, Rev. B.
.SUBCKT Si3911DV 4 1 2   
M1  3 1 2 2 PMOS W=206176u L=0.50u
M2  2 1 2 4 NMOS W=206176u L=1.50u
R1  4 3 RTEMP 39E-3
CGS 1 2 180E-12
DBD 4 2 DBD
*****************************************************************
.MODEL  PMOS         PMOS (LEVEL  = 3             TOX    = 1.7E-8
+ RS     = 48E-3           RD     = 0             NSUB   = 2.4E15   
+ KP     = 2.2E-5          UO     = 400             
+ VMAX   = 0               XJ     = 5E-7          KAPPA  = 2E-3
+ ETA    = 1E-4            TPG    = -1  
+ IS     = 0               LD     = 0                        
+ CGSO   = 0               CGDO   = 0             CGBO   = 0 
+ TLEV   = 1               BEX    = -1.5          TCV    = 1.65E-3
+ NFS    = 0.8E12	   DELTA  = 0.1)
*****************************************************************
.MODEL  NMOS         NMOS (LEVEL  = 3             TOX    = 1.7E-8
+NSUB    = 1.2E16          TPG    = 1)   
*****************************************************************
.MODEL DBD D (CJO=150E-12 VJ=0.38 M=0.38
+RS=0.05 FC=0.5 IS=1E-12 TT=6.7E-8 N=1 BV=20.5)
*****************************************************************
.MODEL RTEMP R (TC1=7.8E-3  TC2=5.5E-6)
*****************************************************************
.ENDS