*Jan 2, 2006 *Doc. ID: 76638, S-52575, Rev. B *Dn Gn Sn Dp Gp Sp .SUBCKT Si4511DY 6 2 1 3 5 4 X1 6 2 1 Si4511N X2 3 5 4 Si4511P .ENDS Si4511DY *N-Ch .SUBCKT Si4511N 4 1 2 M1 3 1 2 2 NMOS W=1724931u L=0.25u M2 2 1 2 4 PMOS W=1724931u L=0.40u R1 4 3 RTEMP 1E-3 CGS 1 2 900E-12 DBD 2 4 DBD ******************************************************************* .MODEL NMOS NMOS ( LEVEL = 3 TOX = 4E-8 + RS = 10E-3 RD = 0 NSUB = 2.34E17 + KP = 2.7E-5 UO = 650 + VMAX = 0 XJ = 5E-7 KAPPA = 4E-1 + ETA = 1E-4 TPG = 1 + IS = 0 LD = 0 + CGSO = 0 CGDO = 0 CGBO = 0 + TLEV = 1 BEX = -1.9 TCV = 3.3E-3 + NFS = 0.8E12 DELTA = 0.1) ******************************************************************* .MODEL PMOS PMOS ( LEVEL = 3 TOX = 4E-8 +NSUB = 1E17 TPG = -1) ******************************************************************* .MODEL DBD D (CJO=770E-12 VJ=0.38 M=0.30 +RS=0.1 FC=0.5 IS=1E-12 TT=5E-8 N=1 BV=20.2) ******************************************************************* .MODEL RTEMP R (TC1=9E-3 TC2=5.5E-6) ******************************************************************* .ENDS Si4511N *P-CH .SUBCKT Si4511P 4 1 2 M1 3 1 2 2 PMOS W=1563708u L=0.50u M2 2 1 2 4 NMOS W=1563708u L=0.65u R1 4 3 RTEMP 7E-3 CGS 1 2 950E-12 DBD 4 2 DBD ***************************************************************** .MODEL PMOS PMOS ( LEVEL = 3 TOX = 3E-8 + RS = 4.8E-3 RD = 0 NSUB = 1.35E16 + KP = 1E-5 UO = 400 + VMAX = 0 XJ = 5E-7 KAPPA = 0.1E-2 + ETA = 1E-4 TPG = -1 + IS = 0 LD = 0 + CGSO = 0 CGDO = 0 CGBO = 0 + TLEV = 1 BEX = -1.5 TCV = 2.5E-3 + NFS = 0.8E12 DELTA = 0.1) ***************************************************************** .MODEL NMOS NMOS ( LEVEL = 3 TOX = 3E-8 +NSUB = 1E17 TPG = 1) ***************************************************************** .MODEL DBD D (CJO=650E-12 VJ=0.38 M=0.38 +RS=0.1 FC=0.5 IS=1E-12 TT=6E-8 N=1 BV=20.2) ***************************************************************** .MODEL RTEMP R (TC1=7.5E-3 TC2=5.5E-6) ***************************************************************** .ENDS Si4511P