*========================================================== * Vishay SI4724CY * March 14, 2005 * Doc. ID: 76694, S-50464, Rev. B * * This model was developed for Vishay by: * AEI Systems, LLC * 5777 W. Century Blvd. Suite 876 * Los Angeles, California 90045 * Copyright 2003, all rights reserved. * * This model is subject to change without notice. * Users may not directly or indirectly re-sell or * re-distribute this model. * * For more information regarding modeling services, * model libraries and simulation products, please * call AEi Systems at (310) 216-1144, or contact * AEi by email: info@aeng.com. http://www.AENG.com * * Revision: 6/3/02, version 1.1 * Revision: 1/28/04, version 1.1 * Updated driver voltages and VTO to reduce IC current draw. * Note, do not trust spice to have accurate currents. ********** .SUBCKT Si4724CY VDD Sync Vin Gnd Boot D1 S1 D2 S2 * VDD Sync Vin Gnd Boot D1 S1 D2 S2 * #alias bbm v(bbm) * #alias g1 v(g1) * #alias in v(vin) * #alias syncin v(18) * #alias in2 v(in2) * #alias in3 v(in3) * #alias vout v(5) * #alias vswitch v(s1) * #alias vboot v(boot) * #alias vdduvlo v(vdduvlo) * #alias g2 v(g2) EB1 15 gnd Value={ IF ( V(Sync) > 2.3, 5, 0 ) } Q1 Boot Boot Vdd SIDVRABSD .MODEL SIDVRABSD PNP BF=1.2465499 BR=0.0743382 + CJC=2.48725E-10 CJE=1.45909E-10 EG=1.32 FC=0.5 + IKF=10.6793593 IKR=100 IRB=9.494516E-6 IS=5.828556E-18 + ISC=5.929013E-14 ISE=3.690477E-15 MJC=0.3677641 + MJE=0.3267463 NC=1.47 NE=1.0479867 NF=0.9018194 + NR=1.0087761 RB=130.4148594 RBM=0.0957343 RC=80 + RE=1.0245273 TR=7.68E-7 VAF=1E4 VAR=2E4 VJC=0.6097614 + VJE=0.803 XTB=3.4 XTI=0.5 EB5 8 G1 Value={ IF ( V(VDDUvlo) > 1 & V(16) > 4, 5, 0 ) } R8 11 8 35 C3 G1 11 30p X3 D2 G2 S2 SIFETADY R2 14 16 200 C1 16 gnd 100p EB2 In2 gnd Value={ IF ( V(16) > 4, 5, 0 ) } R10 15 18 170 C5 18 gnd 200p EB3 In3 gnd Value={ IF ( V(16) > 2.2, 5, 0 ) } EBIN 14 gnd Value={ IF ( V(Vin) > 2.3, 5, 0 ) } XS2 25 VDDUvlo Vdd 0 _S2_mod PARAMS: VT=3.8 VH=.2 ROFF=10meg V7 25 0 DC=10 R5 VDDUvlo gnd 1 EB7 BBM gnd Value={ IF ( V(S1) > 2.4, 5, 0 ) } D3 S2 D2 SISCHC2 .MODEL SISCHC2 D BV=30.2 CJO=200p EG=0.9 FC=0.50 IS=1.5u + N=1 RS=0 VJ=0.6 XTI=0.50 EB4 27 G2 Value={ IF (V(VDDUvlo) > 1 & V(16) < 2.2 & V(18) > 1 & V(BBM) < 1, 5, 0 ) } R6 12 27 10 C2 12 G2 20p X4 D1 G1 S1 SIFETADY M9 S1 11 G1 G1 SIDVRAFETPh .MODEL SIDVRAFETPh PMOS Level=1 CBD=530p CBS=636p + CGBO=1.07u CGDO=650n CGSO=780n GAMMA=0 IS=1.00p KP=75.0m + LAMBDA=2.50m MJ=0.460 PB=0.800 PHI=.75 RD=0.210 RS=0.210 + VTO=2 M10 Gnd 12 G2 G2 SIDVRAFETPL .MODEL SIDVRAFETPL PMOS Level=1 CBD=530p CBS=636p + CGBO=1.07u CGDO=650n CGSO=780n GAMMA=0 IS=1.00p KP=75.0m + LAMBDA=2.50m MJ=0.460 PB=0.800 PHI=.75 RD=0.140 RS=0.140 + VTO=2 M11 Boot 11 G1 G1 SIDVRAFETNh .MODEL SIDVRAFETNh NMOS Level=1 CBD=530p CBS=636p + CGBO=1.07u CGDO=650n CGSO=780n GAMMA=0 IS=1.00p KP=75.0m + LAMBDA=2.50m MJ=0.460 PB=0.800 PHI=.75 RD=98.0m RS=98.0m + VTO=2 M12 Vdd 12 G2 G2 SIDVRAFETNL .MODEL SIDVRAFETNL NMOS Level=1 CBD=530p CBS=636p + CGBO=1.07u CGDO=650n CGSO=780n GAMMA=0 IS=1.00p KP=75.0m + LAMBDA=2.50m MJ=0.460 PB=0.800 PHI=.75 RD=84.0m RS=84.0m + VTO=2 .ENDS .SUBCKT SIFETADY 4 1 2 M1 3 1 2 2 NMOS W=1358279u L=0.50u M2 2 1 2 4 PMOS W=1358279u L=0.40u R1 4 3 RTEMP 11E-3 CGS 1 2 450E-12 DBD 2 4 DBD .MODEL NMOS NMOS (LEVEL = 3 TOX = 5E-8 + RS = 4.3E-3 RD = 0 NSUB = 1.77E17 + KP = 2.1E-5 UO = 650 + VMAX = 0 XJ = 5E-7 KAPPA = 7E-2 + ETA = 1E-4 TPG = 1 + IS = 0 LD = 0 + CGSO = 0 CGDO = 0 CGBO = 0 + NFS = 0.8E12 DELTA = 0.1) .MODEL PMOS PMOS (LEVEL = 3 TOX = 5E-8 +NSUB = 2.1E16 TPG = -1) .MODEL DBD D (CJO=210E-12 VJ=0.38 M=0.22 +RS=0.01 FC=0.1 IS=1E-12 TT=2.8E-8 N=1 BV=30.2) .MODEL RTEMP RES (TC1=6.5E-3 TC2=5.5E-6) .ENDS .subckt SWhyste NodeMinus NodePlus Plus Minus PARAMS: RON=1 ROFF=1MEG VT=5 VH=2 S5 NodePlus NodeMinus 8 0 smoothSW EBcrtl 8 0 Value = { IF ( V(plus)-V(minus) > V(ref), 1, 0 ) } EBref ref1 0 Value = { IF ( V(8) > 0.5, {VT-VH}, {VT+VH} ) } Rdel ref1 ref 100 Cdel ref 0 100p IC={VT+VH} Rconv1 8 0 10Meg Rconv2 plus 0 10Meg Rconv3 minus 0 10Meg .model smoothSW VSWITCH (RON={RON} ROFF={ROFF} VON=1 VOFF=0) .ends