*May 16, 2005 *Doc. ID: 76950, S-50836, Rev. B *Dn Gn Sn Dp Gp Sp .SUBCKT Si3590DV 6 2 1 3 5 4 X1 6 2 1 Si3590N X2 3 5 4 Si3590P .ENDS Si3590DV *N-Ch .SUBCKT Si3590N 4 1 2 M1 3 1 2 2 NMOS W=345253u L=0.25u M2 2 1 2 4 PMOS W=345253u L=0.45u R1 4 3 RTEMP 38E-3 CGS 1 2 200E-12 DBD 2 4 DBD *************************************************************** .MODEL NMOS NMOS ( LEVEL = 3 TOX = 3E-8 + RS = 16E-3 RD = 0 NSUB = 2.9E17 + KP = 3.1E-5 U0 = 650 + VMAX = 0 XJ = 5E-7 KAPPA = 1E-1 + ETA = 1E-4 TPG = 1 + IS = 0 LD = 0 + CGSO = 0 CGDO = 0 CGBO = 0 + TLEV = 1 BEX = -1.5 TCV = 2.8E-3 + NFS = 0.8E12 DELTA = 0.1) *************************************************************** .MODEL PMOS PMOS ( LEVEL = 3 TOX = 3E-8 +NSUB = 4E16 TPG = -1) ************************************************************** .MODEL DBD D (CJO=70E-12 VJ=0.38 M=0.25 +RS=0.1 FC=0.1 IS=1E-12 TT=5E-8 N=1 BV=30.2) *************************************************************** .MODEL RTEMP R (TC1=6E-3 TC2=5.5E-6) *************************************************************** .ENDS Si3590N *P-CH .SUBCKT Si3590P 4 1 2 M1 3 1 2 2 PMOS W=339769u L=0.25u M2 2 1 2 4 NMOS W=339769u L=0.55u R1 4 3 RTEMP 18E-3 CGS 1 2 200E-12 DBD 4 2 DBD *************************************************************** .MODEL PMOS PMOS ( LEVEL = 3 TOX = 3E-8 + RS = 89E-3 RD = 0 NSUB = 6.5E16 + KP = 1E-5 UO = 400 + VMAX = 0 XJ = 5E-7 KAPPA = 4E-2 + ETA = 1E-4 TPG = -1 + IS = 0 LD = 0 + CGSO = 0 CGDO = 0 CGBO = 0 + TLEV = 1 BEX = -1.5 TCV = 3E-3 + NFS = 0.8E12 DELTA = 0.1) *************************************************************** .MODEL NMOS NMOS ( LEVEL = 3 TOX = 3E-8 +NSUB = 6E16 TPG = -1) *************************************************************** .MODEL DBD D (CJO=60E-12 VJ=0.38 M=0.30 +RS=0.1 FC=0.5 IS=1E-12 TT=6E-8 N=1 BV=30.2) *************************************************************** .MODEL RTEMP R (TC1=14E-3 TC2=5.5E-6) *************************************************************** .ENDS Si3590P