*Dec 12, 2005
*Doc. ID: 77019, S-52519, Rev. B
.SUBCKT Si7459DP 4 1 2
M1  3 1 2 2 PMOS W=10173310u L=0.50u  
M2  2 1 2 4 NMOS W=10173310u L=1.20u 
R1  4 3     RTEMP 1.4E-3
CGS 1 2     1300E-12
DBD 4 2     DBD
************************************************************** 
.MODEL  PMOS        PMOS ( LEVEL  = 3          TOX    = 6.5E-8
+ RS     = 3E-3            RD     = 0          NSUB   = 6.5E16   
+ KP     = 5E-6            UO     = 400             
+ VMAX   = 0               XJ     = 5E-7       KAPPA  = 5E-1
+ ETA    = 1E-4            TPG    = -1  
+ IS     = 0               LD     = 0                        
+ CGSO   = 0               CGDO   = 0          CGBO   = 0 
+ TLEV   = 1               BEX    = -1.5       TCV    = 4E-3
+ NFS    = 0.8E12	   DELTA  = 0.1)
************************************************************** 
.MODEL  NMOS        NMOS ( LEVEL  = 3          TOX    = 6.5E-8
+NSUB    = 1.7E16          TPG    = 1)   
************************************************************** 
.MODEL DBD D (CJO=750E-12 VJ=0.38 M=0.30
+RS=0.1 FC=0.5 IS=1E-12 TT=7.5E-8 N=1 BV=30.5)
************************************************************** 
.MODEL RTEMP R (TC1=11E-3 TC2=5.5E-6)
************************************************************** 
.ENDS