*Jan 2, 2006 *Doc. ID: 77412, S-52574, Rev. A *Dn1 Gn1 Sn1 Dn2 Gn2 Sn2 .SUBCKT Si4974DY 8 2 1 6 4 3 X1 8 2 1 Si4974C1 X2 6 4 3 Si4974C2 .ENDS Si4974DY *Channel 1 .SUBCKT Si4974C1 4 1 2 M1 3 1 2 2 NMOS W=1466630u L=0.50u M2 2 1 2 4 PMOS W=1466630u L=0.30u R1 4 3 RTEMP 7E-3 CGS 1 2 400E-12 DBD 2 4 DBD ****************** ************************************************* .MODEL NMOS NMOS ( LEVEL = 3 TOX = 5E-8 + RS = 8E-3 RD = 0 NSUB = 2.35E17 + kp = 3E-5 UO = 650 + VMAX = 0 XJ = 5E-7 KAPPA = 5E-1 + ETA = 1E-4 TPG = 1 + IS = 0 LD = 0 + CGSO = 0 CGDO = 0 CGBO = 0 + TLEV = 1 BEX = -1.5 TCV = 3.3E-3 + NFS = 0.8E12 DELTA = 0.1) ******************************************************************** .MODEL PMOS PMOS ( LEVEL = 3 TOX = 5E-8 +NSUB = 2.6E16 TPG = -1) ******************************************************************** .MODEL DBD D (CJO=160E-12 VJ=0.38 M=0.16 +FC=0.1 IS=1E-12 TT=5E-8 N=1 BV=30.2) ******************************************************************** .MODEL RTEMP R (TC1=7E-3 TC2=5.5E-6) ******************************************************************** .ENDS Si4974C1 *Channel 2 .SUBCKT Si4974C2 4 1 2 M1 3 1 2 2 NMOS W=653317u L=0.50u M2 2 1 2 4 PMOS W=653317u L=0.35u R1 4 3 RTEMP 14E-3 CGS 1 2 150E-12 DBD 2 4 DBD ****************** ************************************************* .MODEL NMOS NMOS ( LEVEL = 3 TOX = 5E-8 + RS = 13E-3 RD = 0 NSUB = 2.1E17 + kp = 4E-5 UO = 650 + VMAX = 0 XJ = 5E-7 KAPPA = 10E-1 + ETA = 1E-4 TPG = 1 + IS = 0 LD = 0 + CGSO = 0 CGDO = 0 CGBO = 0 + TLEV = 1 BEX = -1.5 TCV = 3.5E-3 + NFS = 0.8E12 DELTA = 0.1) ******************************************************************** .MODEL PMOS PMOS ( LEVEL = 3 TOX = 5E-8 +NSUB = 5E16 TPG = -1) ******************************************************************** .MODEL DBD D (CJO=60E-12 VJ=0.38 M=0.16 +FC=0.1 IS=1E-12 TT=5E-8 N=1 BV=30.2) ******************************************************************** .MODEL RTEMP R (TC1=7E-3 TC2=5.5E-6) ******************************************************************** .ENDS Si4974C2