*Jan 2, 2006 *Doc. ID: 77548, S-52575, Rev. B *Dn Gn Sn Dp Gp Sp .SUBCKT Si4565DY 6 2 1 3 5 4 X1 6 2 1 Si4565N X2 3 5 4 Si4565P .ENDS Si4565DY *N-CH .SUBCKT Si4565N 4 1 2 M1 3 1 2 2 NMOS W=1932574u L=0.50u M2 2 1 2 4 PMOS W=1932574u L=0.15u R1 4 3 RTEMP 15E-3 CGS 1 2 10E-12 DBD 2 4 DBD ************************************************************ .MODEL NMOS NMOS (LEVEL = 3 TOX = 3E-8 + RS = 16.6E-3 RD = 0 NSUB = 1.75E17 + KP = 1.8E-5 UO = 650 + VMAX = 0 XJ = 5E-7 KAPPA = 2.5E-1 + ETA = 1E-4 TPG = 1 + IS = 0 LD = 0 + CGSO = 0 CGDO = 0 CGBO = 0 + TLEV = 1 BEX = -1.5 TCV = 2.45E-3 + NFS = 0.8E12 DELTA = 0.1) ************************************************************ .MODEL PMOS PMOS (LEVEL = 3 TOX = 3E-8 +NSUB = 5E16 TPG = -1) ************************************************************ .MODEL DBD D (CJO=130E-12 VJ=0.38 M=0.30 +RS=0.01 FC=0.1 IS=1E-12 TT=5E-8 N=1 BV=40.2) ************************************************************ .MODEL RTEMP R (TC1=9E-3 TC2=5.5E-6) ************************************************************ .ENDS Si4565N *P-CH .SUBCKT Si4565P 4 1 2 M1 3 1 2 2 PMOS W=1256354u L=0.25u M2 2 1 2 4 NMOS W=1256354u L=0.45u R1 4 3 RTEMP 18E-3 CGS 1 2 500E-12 DBD 4 2 DBD *************************************************************** .MODEL PMOS PMOS ( LEVEL = 3 TOX = 4E-8 + RS = 20E-3 RD = 0 NSUB = 8.5E16 + KP = 4E-6 UO = 400 + VMAX = 0 XJ = 5E-7 KAPPA = 1.2E-1 + ETA = 1E-4 TPG = -1 + IS = 0 LD = 0 + CGSO = 0 CGDO = 0 CGBO = 0 + TLEV = 1 BEX = -1.5 TCV = 3.7E-3 + NFS = 0.8E12 DELTA = 0.1) *************************************************************** .MODEL NMOS NMOS ( LEVEL = 3 TOX = 4E-8 +NSUB = 6E16 TPG = -1) *************************************************************** .MODEL DBD D (CJO=140E-12 VJ=0.38 M=0.34 +RS=0.1 FC=0.5 IS=1E-12 TT=6E-8 N=1 BV=40.2) *************************************************************** .MODEL RTEMP R (TC1=10E-3 TC2=5.5E-6) *************************************************************** .ENDS Si4565P