*February 21, 2005 *Doc. ID: 77597, S-50259, Rev. A .SUBCKT Si1026X 4 1 2 M1 3 1 2 2 NMOS W=26124u L=0.50u M2 2 1 2 4 PMOS W=26124u L=0.95u R1 4 3 RTEMP 4.5E-1 CGS 1 2 24E-12 DBD 2 4 DBD ************************************************************ .MODEL NMOS NMOS (LEVEL = 3 TOX = 7E-8 + RS = 4E-1 RD = 0 NSUB = 6.2E16 + KP = 1E-5 UO = 650 + VMAX = 0 XJ = 5E-7 KAPPA = 8E-2 + ETA = 1E-4 TPG = 1 + IS = 0 LD = 0 + CGSO = 0 CGDO = 0 CGBO = 0 + TLEV = 1 BEX = -1.5 TCV = 6E-3 + NFS = 0.8E12 DELTA = 0.1) ************************************************************ .MODEL PMOS PMOS (LEVEL = 3 TOX = 7E-8 +NSUB = 2.6E16 TPG = -1) ************************************************************ .MODEL DBD D (CJO=13E-12 VJ=0.38 M=0.30 +RS=1 FC=0.1 IS=1E-12 TT=4E-8 N=1 BV=60.5) ************************************************************ .MODEL RTEMP R (TC1=8E-3 TC2=5.5E-6) ************************************************************ .ENDSױM5P 8 z{Sʗ{VvxM\О׵:ǬI؁{{бʦ؝(n!+*+Ȋֆgzvx\f''#s2&54eB2"##"2Rӓ#TD2DB"$T2T2R$5RSTrRE44teT2T2R"dbEТDB3%3ED%cRD323RR