*March 14, 2005
*Doc. ID: 77645, S-50412, Rev. A
.SUBCKT Si1419DH 4 1 2
M1  3 1 2 2 PMOS W=311126u L=0.25u            
M2  2 1 2 4 NMOS W=311126u L=0.35u  
R1  4 3     RTEMP 25E-1
CGS 1 2     150E-12
DBD 4 2     DBD
***************************************************************  
.MODEL  PMOS       PMOS  ( LEVEL  = 3          TOX    = 7E-8
+ RS     = 14E-1           RD     = 0          NSUB   = 1.55E17
+ KP     = 3E-6            UO     = 400             
+ VMAX   = 0               XJ     = 5E-7       KAPPA  = 1E-3
+ ETA    = 1E-4            TPG    = -1  
+ IS     = 0               LD     = 0                        
+ CGSO   = 0               CGDO   = 0          CGBO   = 0 
+ TLEV   = 1               BEX    = -1.5       TCV    = 5.8E-3
+ NFS    = 0.8E12          DELTA  = 0.1)
*************************************************************** 
.MODEL  NMOS       NMOS  ( LEVEL  = 3          TOX    = 7E-8
+NSUB    = 2E16            TPG    = -1)   
*************************************************************** 
.MODEL DBD D (CJO=17E-12 VJ=0.38 M=0.15
+RS=0.1 FC=0.5 IS=1E-12 TT=6E-8 N=1 BV=202)
*************************************************************** 
.MODEL RTEMP R (TC1=11E-3 TC2=5.5E-6)
*************************************************************** 
.ENDS